机构

• 长春光学精密机械与物... [2]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [3]

内容类型

• 会议论文 [2]
• 期刊论文 [1]

发表日期

• 2018 [1]
• 2005 [2]

学科主题

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Quasi-three-level Nd:GdYNbO4 927 nm laser under 879 nm laser diode pumping 期刊论文  OAI收割 LASER PHYSICS, 2018, 卷号: 28, 期号: 8, 页码: 5 作者:  Yan, Renpeng;  Zhao, Chuang;  Li, Xudong;  Li, Kang;  Yu, Xin   |  收藏  |  浏览/下载：53/0  |  提交时间：2019/11/12 laser diode (LD) pumped  quasi-three-level  direct pumping  Nd:GdYNbO4   All-solid-stated laser controller design based on digital optical feedback (EI CONFERENCE) 会议论文  OAI收割 Lasers in Material Processing and Manufacturing II, November 10, 2004 - November 12, 2004, Beijing, China 作者:  Liu L.;  Wang J.-L.;  Wang J.-L.;  Liu L. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 The new design about a CW  digital all-solid-stated LD pumped Nd:YVO 4 controller is introduced. The stable output power of this digital laser controller which adopts Digital Signal Processor(TMS320C31) is approximately 20mW. The whole system is composed of constant- current source  protection circuit  pulse-width modulation circuit  Si-photo-detector and amplified circuit and Digital Signal Processor control system  etc. In terms of error deviation Based on nonlinear control curves of LD power output by Si-photo-detector  the region control can be obtained by means of the PID control algorithm in the software platform  that is  error amendment and high stability laser power output can be achieved. And the precision of temperature control can reduce from 0.2C to 0.04C. By adopted integral separated mode PID control algorithm  the LD output power instability ( %) down to 2%. By way of adopting the new digital design  the work to protect the laser diode  including the continuous adjustable output power with high accuracy and stability  is easily obtained. The internal-external modulation control of the laser power based on digital optical feedback can be accomplished with stable power output. At last  the bringing reasons of noise are analyzed and the solving methods are put forward in this paper.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.