中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共3条,第1-3条 帮助

条数/页: 排序方式:
Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd 期刊论文  iSwitch采集
Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
作者:  
Zhao, Yongmei;  Sun, Guosheng;  Liu, Xingfang;  Li, Jiaye;  Zhao, Wanshun
收藏  |  浏览/下载:35/0  |  提交时间:2019/05/12
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文  OAI收割
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM
收藏  |  浏览/下载:53/0  |  提交时间:2010/03/08
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25