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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [2]
长春光学精密机械与物... [1]
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期刊论文 [2]
会议论文 [1]
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2007 [2]
2005 [1]
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半导体材料 [1]
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Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd
期刊论文
iSwitch采集
Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
作者:
Zhao, Yongmei
;
Sun, Guosheng
;
Liu, Xingfang
;
Li, Jiaye
;
Zhao, Wanshun
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  |  
浏览/下载:35/0
  |  
提交时间:2019/05/12
Aluminum nitride
Low pressure metalorganic chemical vapor deposition (lp-mocvd)
V/iii ratio
Preferential orientation growth mechanism
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
期刊论文
OAI收割
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Luo, MC
;
Li, JM
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  |  
浏览/下载:53/0
  |  
提交时间:2010/03/08
aluminum nitride
low pressure metalorganic chemical vapor deposition (LP-MOCVD)
V/III ratio
preferential orientation growth mechanism
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)
会议论文
OAI收割
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.
;
Shan C. X.
;
Yang Y.
;
Zhang J. Y.
;
Liu Y. C.
;
Lu Y. M.
;
Shen D. Z.
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浏览/下载:29/0
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提交时间:2013/03/25
CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time
the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration
the size of dots becomes larger and the density decreases
which is explained by virtue of the surface free energy.