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CAS IR Grid
机构
西安光学精密机械研究... [2]
大连化学物理研究所 [1]
半导体研究所 [1]
采集方式
OAI收割 [4]
内容类型
期刊论文 [4]
发表日期
2019 [1]
2015 [1]
2007 [1]
2005 [1]
学科主题
光电子学 [1]
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All-polarization-maintaining, semiconductor saturable absorbing mirror mode-locked femtosecond Er-doped fiber laser with a gigahertz fundamental repetition rate
期刊论文
OAI收割
LASER PHYSICS LETTERS, 2019, 卷号: 16, 期号: 9
作者:
Song, Jiazheng
;
Hu, Xiaohong
;
Wang, Hushan
;
Zhang, Ting
;
Wang, Yishan
  |  
收藏
  |  
浏览/下载:98/0
  |  
提交时间:2019/08/23
polarisation-maintaining (PM)
high-pulse repetition rate
low-timing jitter
Low Repetition Rate Subnanosecond Pulse Characteristics of Nd:Lu0.5Y0.5VO4/KTP Green Laser With EO and MWCNT
期刊论文
OAI收割
ieee journal of selected topics in quantum electronics, 2015, 卷号: 21, 期号: 1
作者:
Zhang, Haijuan
;
Zhao, Jia
;
Yang, Kejian
;
Zhao, Shengzhi
;
Li, Tao
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2015/07/22
EO and MWCNT
doubly QML laser
low repetition rate
sub-nanosecond pulse width
Raman spectroscopic investigation of solid samples using a low-repetition-rate pulsed Nd : YAG laser as the excitation source
期刊论文
OAI收割
applied spectroscopy, 2007, 卷号: 61, 期号: 1, 页码: 38-47
作者:
Zhang, Jing
;
Feng, Zhaochi
;
Li, Meijun
;
Chen, Jun
;
Xu, Qian
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2015/11/11
low-repetition-rate pulsed laser
UV Raman spectroscopy
Raman spectroscopy
thermal damage
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation
期刊论文
OAI收割
semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
;
Wang, LF
;
Wang, W
收藏
  |  
浏览/下载:124/47
  |  
提交时间:2010/03/17
摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA
output light power of 4.5 mW
and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover
over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device
10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.