机构

• 福建物质结构研究所 [4]
• 长春光学精密机械与物... [2]
• 半导体研究所 [1]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [5]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2007 [1]
• 2005 [2]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Polarized spectral analysis of Er(3+) ions in Er(3+):LiGd(MoO(4))(2) crystal 期刊论文  OAI收割 Journal of Alloys and Compounds, 2011, 卷号: 509, 期号: 23, 页码: 6578-6584 X. Y. Huang; W. Zhao; G. F. Wang; X. X. Li; Q. M. Yu 收藏  |  浏览/下载：39/0  |  提交时间：2012/06/06 Er(3+):LiGd(MoO(4))(2) crystal  Spectroscopic characteristics  Upconversion  rare-earth ions  up-conversion  absorption intensities  laser  applications  optical-properties  mu-m  growth  (na0.5r0.5)mo4  spectroscopy  emission   Spectroscopy and Energy Transfer in Yb3+ and Tm3+ Co-doped Gd3Ga5O12 Crystal 期刊论文  OAI收割 Chinese Journal of Structural Chemistry, 2010, 卷号: 29, 期号: 3, 页码: 449-458 G. T. Chen, H. Zhou, W. C. Lv, Y. Wang, Z. Y. You, J. F. Li, Z. J. Zhu and C. Tu 收藏  |  浏览/下载：32/0  |  提交时间：2012/11/02 Yb3+/Tm3+ co-doped Gd3Ga5O12 crystal  Judd-Ofelt (J-O) theory  spectrum  characteristics  energy transfer  rare-earth ions  judd-ofelt analysis  optical characterization  absorption intensities  spectral properties  mu-m  laser  ho3+  fluorescence  garnets   Thermal and polarized spectroscopic characteristics of Nd3+:LiLa(WO4)(2) crystal 期刊论文  OAI收割 Journal of Alloys and Compounds, 2009, 卷号: 468, 期号: 1-2, 页码: 321-326 X. Y. Huang, Q. Fang, Q. M. Yu, X. D. Lue, L. Z. Zhang, Z. B. Lin and G. F. Wang 收藏  |  浏览/下载：21/0  |  提交时间：2012/11/06 Nd3+:LiLa(WO4)(2) crystals  Optical characteristics  Thermal properties  m laser characteristics  rare-earth ions  nd-kgw laser  spectral  properties  single-crystal  nd3+-kla(wo4)(2) crystal  optical  absorption  growth  intensities  emission   Growth and spectroscopic properties of Nd3+ : BaLaLiWO6 crystal 期刊论文  OAI收割 Journal of Crystal Growth, 2007, 卷号: 299, 期号: 1, 页码: 223-226 D. Zhao; Z. B. Lin; L. Z. Zhang; G. F. Wang 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/01 optical microscopy  growth from melt  tungstates  solid-state laser  materials  m laser characteristics  mu-m  spectral parameters  nd3+-kla(wo4)(2)  crystal  nd3+ ion   High power output and temperature characteristics of 1.06m diode array module (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Yao S.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：61/0  |  提交时间：2013/03/25 In this paper high power diode array module with an emission wavelength of 1.06m is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20C to 40C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20C. The central wavelength is 1059.4nm.   High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power  wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current  which is very favorable for focusing or collmating optics.   Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358 作者:  Xu B;  Jiang DS;  Wang ZG 收藏  |  浏览/下载：98/7  |  提交时间：2010/08/12 nanostructures  molecular beam epitaxy  semiconductor III-V materials  laser diodes  1.3 MU-M  CONTINUOUS-WAVE OPERATION  TEMPERATURE-DEPENDENCE  LASING CHARACTERISTICS  1.3-MU-M  PHOTOLUMINESCENCE  GAIN