机构

• 长春光学精密机械与物... [1]
• 过程工程研究所 [1]
• 自动化研究所 [1]
• 武汉岩土力学研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2019 [1]
• 2017 [1]
• 2013 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 H∞ State Estimation for Stochastic Markovian Jumping Neural Network with Time-varying Delay and Leakage Delay 期刊论文  OAI收割 International Journal of Automation and Computing, 2019, 卷号: 16, 期号: 3, 页码: 329-340 作者:  Ya-Jun Li;  Zhao-Wen Huang;  Jing-Zhao Li   |  收藏  |  浏览/下载：8/0  |  提交时间：2021/02/22 H∞ filtering state estimation  Markovian jump  exponential stability  linear matrix inequality (LMI)  neural networks  time-varying delay  leakage delay.   Modeling the key factors that could influence the diffusion of CO2 from a wellbore blowout in the Ordos Basin, China 期刊论文  OAI收割 ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH, 2017, 卷号: 24, 期号: 4, 页码: 3727-3738 作者:  Wei, Xiaochen;  Li, Qi;  Shi, Hui;  Yang, Duoxing   |  收藏  |  浏览/下载：42/0  |  提交时间：2018/06/05 CO2 capture and storage (CCS)  Wellbore leakage  CO2 diffusion  Uncertainty analysis  Environmental risk assessment  Risk matrix   Determination of leakage from antibody adsorbent: composition analysis and pH effect 期刊论文  OAI收割 BIOMEDICAL CHROMATOGRAPHY, 2013, 卷号: 27, 期号: 9, 页码: 1089-1091 作者:  Zhao, Lan;  Liu, Yongdong;  Wang, Yinjue;  Huang, Yongdong;  Li, Xiunan 收藏  |  浏览/下载：32/0  |  提交时间：2015/05/05 immunoadsorbent  human immunoglobulin G  ligand leakage  matrix leakage  pH-dependent   An LCoS microdisplay with new frame buffer pixel circuits (EI CONFERENCE) 会议论文  OAI收割 Second Americas Display Engineering and Applications Conference, ADEAC 2005, October 25, 2005 - October 27, 2005, Portland, OR, United states Song Y.; Ling Z. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 In this paper we proposed novel frame buffer pixel circuits for LCoS microdisplays. The new pixel circuits were simulated and compared with others by SPICE. They can decrease the leakage current by minimizing the amount of transistors connecting with the pixel electrode in the voltage-holding period. And the PMOS charge-clear transistor is introduced firstly to simplify Interconnects of active matrix silicon backplane. The new pixel circuits have the advantages of high resistance to EMI  high voltage holding ratio under high Illumination and high temperature variance  less flick  and simple Interconnects.