机构

• 长春光学精密机械与物... [3]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [3]
• 期刊论文 [1]

发表日期

• 2011 [1]
• 2010 [1]
• 2008 [1]
• 2007 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Growth of short-period InAs/GaSb superlattices for infrared sensing 期刊论文  OAI收割 journal of infrared and millimeter waves, 2011, 卷号: 30, 期号: 6, 页码: 511-+ 作者:  Wang Tao;  Yang Jin;  Yin Fei;  Wang Jing-Wei;  Hu Ya-Nan 收藏  |  浏览/下载：23/0  |  提交时间：2015/09/28 InAs/GaSb superlattice  band gap  metal organic chemical vapor deposition (MOCVD)  atomic force microscope(AFM)  PL spectra   ZnO films growth at different temperature on the substrate of Corning glass by MOCVD (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Zhao J.;  Gao X.;  Wang C.;  Tang W. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46  indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM). (2010) Trans Tech Publications.   ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文  OAI收割 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：168/0  |  提交时间：2013/03/25 ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1  2  3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50  indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.