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	Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者: Liu Y.; Liu Y.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1 2 and 3) in one period QW depth barrier width the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications Switzerland.
	Design and preliminary test results of Daya Bay RPC modules 期刊论文 OAI收割中国物理C, 中国物理C, 2011, 2011, 期号: 9, 页码: 844-850, 844-850 作者: Xu JL(徐吉磊); Guan MY(关梦云); Yang ZG(杨长根); Wang YF(王贻芳); Zhang JW(张家文) \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2015/12/15 RPC RPC modules module efficiency dead area Daya Bay neutrino experiment RPC RPC modules module efficiency dead area Daya Bay neutrino experiment
	High power output and temperature characteristics of 1.06m diode array module (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Yao S.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：60/0 \| 提交时间：2013/03/25 In this paper high power diode array module with an emission wavelength of 1.06m is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20C to 40C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20C. The central wavelength is 1059.4nm.