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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
长春光学精密机械与物... [2]
采集方式
OAI收割 [2]
内容类型
会议论文 [2]
发表日期
2013 [2]
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Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE)
会议论文
OAI收割
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
作者:
Liu Y.
;
Liu Y.
;
Wang L.
;
Wang L.
;
Wang L.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method
self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode
the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1
2 and 3) in one period
QW depth
barrier width
the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis
we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device
the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications
Switzerland.
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL)
会议论文
OAI收割
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
作者:
Liu Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2014/05/15