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	Pressure-dependent synthesis of graphene nanoflakes using Ar/H-2/CH4 non-thermal plasma based on rotating arc discharge 期刊论文 OAI收割 DIAMOND AND RELATED MATERIALS, 2021, 卷号: 111 作者: Wang, Cheng; Lu, ZhongShan; Ma, Jing; Chen, Xianhui; Yang, Chengpeng \| 收藏 \| 浏览/下载：43/0 \| 提交时间：2021/04/26 Graphene nanoflakes Non-thermal plasma Rotating arc discharge Pressure effect Carbonaceous radicals
	Detailed modeling of the effects of K/Na additives on the thermal DeNO(x) process 期刊论文 OAI收割 ENERGY & FUELS, 2013, 卷号: 27, 期号: 1, 页码: 421-429 作者: Guo XF(郭啸峰); Wei XL(魏小林); Li S(李森) 收藏 \| 浏览/下载：36/0 \| 提交时间：2013/05/21 Computational fluid dynamics Experiments Oxygen Potassium Selective catalytic reduction Sodium Chemistry mechanism Detailed chemical kinetic Detailed modeling Entrained Flow Reactor Metal additives Na concentration NO reduction Normalized stoichiometric ratio Oxygen concentrations Promoting effect Radical production Reduced mechanisms Selective non-catalytic reduction Sodium additive Temperature range Temperature window Thermal DeNO
	Design and simulation of CMOS star sensor lens with large relative aperture and wide field (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Electronic and Mechanical Engineering and Information Technology, EMEIT 2011, August 12, 2011 - August 14, 2011, Harbin, China Zhong X.; Jin G. 收藏 \| 浏览/下载：60/0 \| 提交时间：2013/03/25 A 50mm focal length F/1.25 Gaussian type optical system is designed in this paper which has 20field of view. Actual star image adding optical cross-talk effect of CMOS(Complementary Metal Oxide Semiconductor) detector is simulated by non-sequential ray tracing in ZEMAX optical design and analysis software to evaluate its performance. The distortion relative to image spot centriod is introduced and calculated by simulated star images which is less than 0.03% of lens in this paper. Thermal adaptability is discussed by opt-mechanic thermal analysis which shows the RMS spot radius of marginal filed changes less than 0.7m under 10C temperature gradient and changes less than 1m during homogeneous temperature changing from 40C to 40C. The results of analyses and simulations show the design of this lens can achieve the requirement of high precision CMOS star sensor well. 2011 IEEE.
	Microwave synthesis of zeolite membranes: A review 期刊论文 OAI收割 journal of membrane science, 2008, 卷号: 316, 期号: 1-2, 页码: 3-17 作者: Li, Yanshuo; Yang, Weishen 收藏 \| 浏览/下载：29/0 \| 提交时间：2010/11/30 LTA MFI AFI zeolite membrane microwave synthesis non-thermal effect
	The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.