中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Size- and temperature-dependent thermal transport across a Cu-diamond interface: Non-equilibrium molecular dynamics simulations 期刊论文  OAI收割
SURFACES AND INTERFACES, 2023, 卷号: 37, 页码: 102736
作者:  
Huang, Hai;  Zhong, Yinghui;  Cai, Bin;  Wang, Jiefang;  Liu, Zhongxia
  |  收藏  |  浏览/下载:75/0  |  提交时间:2023/06/15
Thermal radiation and chemically reactive aspects of mixed convection flow using water base nanofluids: Tiwari and Das model 期刊论文  OAI收割
WAVES IN RANDOM AND COMPLEX MEDIA, 2021, 页码: 31
作者:  
Elkotb, Mohamed Abdelghany;  Hamid, Aamir;  Khan, M. Riaz;  Khan, Muhammad Naveed;  Galal, Ahmed M.
  |  收藏  |  浏览/下载:36/0  |  提交时间:2022/04/02
Biological effects of terahertz waves 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2021, 卷号: 70, 期号: 24, 页码: 14
作者:  
Peng Xiao-Yu;  Zhou Huan
  |  收藏  |  浏览/下载:19/0  |  提交时间:2022/08/22
Wear mechanism transition dominated by subsurface recrystallization structure in Cu-Al alloys 期刊论文  OAI收割
Wear, 2014, 卷号: 320, 页码: 41-50
X. Chen; Z. Han; K. Lu
收藏  |  浏览/下载:22/0  |  提交时间:2015/01/14
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.