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CAS IR Grid
机构
力学研究所 [1]
金属研究所 [1]
长春光学精密机械与物... [1]
数学与系统科学研究院 [1]
重庆绿色智能技术研究... [1]
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OAI收割 [5]
内容类型
期刊论文 [4]
会议论文 [1]
发表日期
2023 [1]
2021 [2]
2014 [1]
2007 [1]
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Size- and temperature-dependent thermal transport across a Cu-diamond interface: Non-equilibrium molecular dynamics simulations
期刊论文
OAI收割
SURFACES AND INTERFACES, 2023, 卷号: 37, 页码: 102736
作者:
Huang, Hai
;
Zhong, Yinghui
;
Cai, Bin
;
Wang, Jiefang
;
Liu, Zhongxia
  |  
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2023/06/15
Interfacial thermal transport
Cu -diamond composites
Size effects
Temperature effects
Non -equilibrium molecular dynamics
Thermal radiation and chemically reactive aspects of mixed convection flow using water base nanofluids: Tiwari and Das model
期刊论文
OAI收割
WAVES IN RANDOM AND COMPLEX MEDIA, 2021, 页码: 31
作者:
Elkotb, Mohamed Abdelghany
;
Hamid, Aamir
;
Khan, M. Riaz
;
Khan, Muhammad Naveed
;
Galal, Ahmed M.
  |  
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2022/04/02
Local non-similar solution
Tiwari and Das model
mixed convection flow
thermal radiation
chemical reaction effects
Biological effects of terahertz waves
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2021, 卷号: 70, 期号: 24, 页码: 14
作者:
Peng Xiao-Yu
;
Zhou Huan
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2022/08/22
terahertz waves
biological effects
thermal effects
non-thermal effects
Wear mechanism transition dominated by subsurface recrystallization structure in Cu-Al alloys
期刊论文
OAI收割
Wear, 2014, 卷号: 320, 页码: 41-50
X. Chen
;
Z. Han
;
K. Lu
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2015/01/14
Sliding wear
Non-ferrous metals
Copper
Aluminum
Thermal effects
Electron microscopy
stacking-fault energy
dynamic plastic-deformation
sliding wear
grain-boundary
si alloy
copper
behavior
aluminum
friction
metals
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Li J.
;
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Li J.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.