机构

• 金属研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [1]
• 期刊论文 [1]

发表日期

• 2007 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers 期刊论文  OAI收割 Ieee Photonics Technology Letters, 2005, 卷号: 17, 期号: 2, 页码: 276-278 J. Y. Jin; J. Shi; D. C. Tian 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/14 cavity length  high-temperature performance  multiquantum-well (MQW)  output power degradation  semiconductor lasers  stripe width  efficiency  mode