机构

• 长春光学精密机械与物... [2]
• 自动化研究所 [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2018 [1]
• 2010 [1]
• 2005 [2]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Research on Wavelength Shift Correction Algorithm for Tunable Laser Absorption Spectrum 期刊论文  OAI收割 SPECTROSCOPY AND SPECTRAL ANALYSIS, 2018, 期号: 11, 页码: 3328-3333 作者:  Tang Qi-xing;  Zhang Yu-jun;  Chen Dong;  Zhang Kai;  He Ying   |  收藏  |  浏览/下载：63/0  |  提交时间：2019/12/25 Laser absorption spectroscopy  Laser wavelength shift  Time domain correlation  Spectrum peak-finding   In Vivo Quantitative Reconstruction Studies of Bioluminescence Tomography: Effects of Peak-Wavelength Shift and Model Deviation 期刊论文  OAI收割 IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 2010, 卷号: 57, 期号: 10, 页码: 2579-2582 作者:  Liu, Junting;  Chen, Duofang;  Li, Xiangsi;  Ma, Xiaopeng;  Chen, Haichao 收藏  |  浏览/下载：31/0  |  提交时间：2015/08/12 Bioluminescence tomography (BLT)  model deviations  peak-wavelength shift  quantitative reconstruction   High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.