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CAS IR Grid
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长春光学精密机械与物... [2]
力学研究所 [1]
物理研究所 [1]
近代物理研究所 [1]
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OAI收割 [5]
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期刊论文 [3]
会议论文 [2]
发表日期
2020 [1]
2014 [1]
2006 [3]
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Effect of Cr Atom Plasma Emission Intensity on the Characteristics of Cr-DLC Films Deposited by Pulsed-DC Magnetron Sputtering
期刊论文
OAI收割
coatings, 2020, 卷号: 10, 页码: 68
作者:
Li G(李光)
;
Xu Y(许亿)
;
Xia Y(夏原)
  |  
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2020/06/29
: diamond-like carbon (DLC)
plasma emission intensity
magnetron sputtering
tribological performance
A Comparative Study of the Laser Induced Breakdown Spectroscopy in Single- and Collinear Double-Pulse Laser Geometry
期刊论文
OAI收割
PLASMA SCIENCE & TECHNOLOGY, 2014, 卷号: 16, 页码: 374-379
作者:
Sun Duixiong
;
Su Maogen
;
Dong Chenzhong
;
Wen Guanhong
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2018/07/05
Plasma Diagnostics
Intensity Calibration
Emission Signal Enhancement
Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE)
会议论文
OAI收割
Zhang Y. J.
;
Xu C. S.
;
Liu Y. C.
;
Liu Y. X.
;
Wang G. R.
;
Fan X. W.
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2013/03/25
We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h
a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range
from 80 to 300 K
but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE)
会议论文
OAI收割
作者:
Zhang J.
;
Zhang J.
;
Zhang J.
;
Li B.
;
Li B.
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  |  
浏览/下载:22/0
  |  
提交时间:2013/03/25
MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported
which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved.
Proton acceleration from microdroplet spray by weakly relativistic femtosecond laser pulses
期刊论文
OAI收割
PHYSICAL REVIEW E, 2006, 卷号: 74, 期号: 3
Peng, XY
;
Zhang, J
;
Zheng, J
;
Sheng, ZM
;
Xu, MH
;
Zheng, ZY
;
Liang, TJ
;
Li, YT
;
Dong, QL
;
Yuan, XH
;
Li, YJ
;
Li, HM
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2013/09/24
HIGH-INTENSITY LASER
ION-ACCELERATION
PLASMA INTERACTIONS
SOLID TARGETS
TRANSPORT
CLUSTERS
ELECTRON
EMISSION
TRACKS
BEAMS