中国科学院机构知识库网格系统: 检索

Observed poleward shift of the South Equatorial Current and associated thermohaline variations in the South Pacific subtropical gyre 期刊论文 OAI收割
GEOSCIENCE LETTERS, 2025, 卷号: 12, 期号: 1, 页码: 11
作者: Sun, Jingxuan; Zhang, Linlin

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收藏 | 浏览/下载：29/0 | 提交时间：2025/07/11

Pacific South Equatorial Current Steric height Long-term change Poleward shift

Universal Enhancement Effect of Nonlinear Optical Response from Band Hybridization 期刊论文 OAI收割
ADVANCED OPTICAL MATERIALS, 2024, 页码: 8
作者: Lai, Junwen; Zhan, Jie; Liu, Peitao; Shirakawa, Tomonori; Seiji, Yunoki

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收藏 | 浏览/下载：1/0 | 提交时间：2025/04/27

band inversion bulk photovoltaic effect DFT calculations shift current

Northward Expansion of a Warm-Water Doliolid Dolioletta gegenbauri (Uljanin, 1884) into a Temperate Bay, China 期刊论文 OAI收割
WATER, 2022, 卷号: 14, 期号: 11, 页码: 10
作者: Wang, Shiwei; Wan, Aiyong; Zhang, Guangtao; Sun, Song

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收藏 | 浏览/下载：73/0 | 提交时间：2022/07/18

Dolioletta gegenbauri Jiaozhou Bay warming boundary current borthward shift

Latitudinal shift and tilt of the ring current during magnetic storms 期刊论文 OAI收割
CHINESE SCIENCE BULLETIN, 2009, 卷号: 54, 期号: 1, 页码: 95-103
作者: Chen Bo; Xu WenYao; Chen GengXiong; Du AiMin; Wu YingYan

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收藏 | 浏览/下载：29/0 | 提交时间：2018/09/26

ring current geomagnetic inversion configuration tilt and latitude shift magnetic storms

Latitudinal shift and tilt of the ring current during magnetic storms 期刊论文 OAI收割
CHINESE SCIENCE BULLETIN, 2009, 卷号: 54, 期号: 1, 页码: 95-103
作者: Chen Bo; Xu WenYao; Chen GengXiong; Du AiMin; Wu YingYan

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收藏 | 浏览/下载：40/0 | 提交时间：2018/09/26

ring current geomagnetic inversion configuration tilt and latitude shift magnetic storms

Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 OAI收割
Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China
作者: Qin L.

收藏 | 浏览/下载：50/0 | 提交时间：2013/03/25

By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current efficiency emission wavelength and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results it is shown that the device can still operate at high temperature condition.

Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者: Zhang Z.-W.

收藏 | 浏览/下载：37/0 | 提交时间：2013/03/25

The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.

High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y.

收藏 | 浏览/下载：36/0 | 提交时间：2013/03/25

Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.

Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China
作者: Wang L.; Wang L.; Wang L.

收藏 | 浏览/下载：32/0 | 提交时间：2013/03/25

Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.

Characteristics of low-frequency components of the near-bottom current in the Chinese Pioneer Area 期刊论文 OAI收割
CHINESE SCIENCE BULLETIN, 2004, 卷号: 49, 期号: 11, 页码: 1184-1189
作者: Liang, CJ; Hou, YJ; Chen, Q; Dong, RZ; Dong, LX

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收藏 | 浏览/下载：25/0 | 提交时间：2010/12/22

Chinese Pioneer Area Low-frequency Current Frequency Shift