中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共8条,第1-8条 帮助

条数/页: 排序方式:
Conceptual Design of 15 Tesla Conductor Test Facility for Future Fusion Reactor 期刊论文  OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2020, 卷号: 30
作者:  
Dai, Chao;  Wu, Yu;  Qin, Jinggang
  |  收藏  |  浏览/下载:56/0  |  提交时间:2020/11/26
Quality evaluation of solar magnetic field images at EUV wavelengths in digital image correlation method 期刊论文  OAI收割
Journal of Computational Methods in Sciences and Engineering, 2019, 卷号: 19, 期号: 4, 页码: 1109-1123
作者:  
Y.Liu;  K.-F.Song;  J.-L.Ma;  X.-D.Wang;  Z.-W.Han
  |  收藏  |  浏览/下载:37/0  |  提交时间:2020/08/24
Contemporary Crustal Deformation Within the Pamir Plateau Constrained by Geodetic Observations and Focal Mechanism Solutions 期刊论文  OAI收割
PURE AND APPLIED GEOPHYSICS, 2018, 卷号: 175, 期号: 10, 页码: 3463-3484
作者:  
He, JK (He, Jiankun)
  |  收藏  |  浏览/下载:46/0  |  提交时间:2019/05/21
Experimental investigation on the J-pipe in offshore oilfield 会议论文  OAI收割
21st International Offshore and Polar Engineering Conference, ISOPE-2011, Maui, HI, United states, JUN 19-24, 2011
作者:  
Li ZY(李中阳);  Lin M(林缅);  Li ZY(李中阳)
收藏  |  浏览/下载:18/0  |  提交时间:2013/02/26
Enhancement of the critical current density and upper critical field in Zr and Mo co-doped Nb3Sn 期刊论文  OAI收割
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2010, 卷号: 23, 期号: 2
He, B; Dong, C; Cao, WH; Liao, CZ; Yang, LH; Chen, H
收藏  |  浏览/下载:23/0  |  提交时间:2013/09/17
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  
Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  
Energy spectra, g factors and their pressure-induced and/or thermal shifts of SrTiO3 : Cr3+ and SrTiO3 : Mn4+ II: Pressure effects on ground-state g factor and splittings of t(2)(3) E-2 and t(2)(3) (4)A(2) of SrTiO3 : Cr3+ 期刊论文  OAI收割
Communications in Theoretical Physics, 2001, 卷号: 35, 期号: 5, 页码: 627-634
D. P. Ma; J. P. Zhang
收藏  |  浏览/下载:14/0  |  提交时间:2012/04/14
Effect of small gamma-precipitates on the two-way shape memory effect in Cu-Zn-Al alloys 期刊论文  OAI收割
Materials & Design, 2000, 卷号: 21, 期号: 6, 页码: 557-559
X. M. Zhang; M. Liu; J. Fernandez; J. M. Guilemany
收藏  |  浏览/下载:16/0  |  提交时间:2012/04/14