中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共11条,第1-10条 帮助

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Cosmology with the Laser Interferometer Space Antenna 期刊论文  OAI收割
LIVING REVIEWS IN RELATIVITY, 2023, 卷号: 26, 期号: 1, 页码: 5
作者:  
Auclair, Pierre;  Bacon, David;  Baker, Tessa;  Barreiro, Tiago;  Bartolo, Nicola
  |  收藏  |  浏览/下载:37/0  |  提交时间:2023/12/07
The Gravitational-wave physics II: Progress 期刊论文  OAI收割
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2021, 卷号: 64, 期号: 12, 页码: 120401
作者:  
Bian, Ligong;  Cai, Rong-Gen;  Cao, Shuo;  Cao, Zhoujian;  Gao, He
  |  收藏  |  浏览/下载:39/0  |  提交时间:2023/01/16
Structure of Chinese city network as driven by technological knowledge flows SCI/SSCI论文  OAI收割
2015
作者:  
Ma H. T.;  Fang, C. L.;  Pang, B.;  Wang, S. J.
收藏  |  浏览/下载:30/0  |  提交时间:2015/12/09
Variability of the giant X-ray bump in GRB 121027A and its possible origin 期刊论文  OAI收割
MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY, 2014, 卷号: 441, 期号: 3, 页码: 2375-2379
Hou, SJ; Gao, H; Liu, T; Gu, WM; Lin, DB; Li, YP; Men, YP; Wu, XF; Lei, WH; Lu, JF
收藏  |  浏览/下载:50/0  |  提交时间:2015/06/03
RELATIVISTIC GLOBAL SOLUTIONS OF NEUTRINO-DOMINATED ACCRETION FLOWS 期刊论文  OAI收割
ASTROPHYSICAL JOURNAL SUPPLEMENT SERIES, 2013, 卷号: 207, 期号: 2
Xue, L; Liu, T; Gu, WM; Lu, JF
收藏  |  浏览/下载:37/0  |  提交时间:2014/04/25
Revisiting the hot matter in the center of gamma-ray bursts and supernovae 期刊论文  OAI收割
ASTRONOMY & ASTROPHYSICS, 2013, 卷号: 555, 期号: -, 页码: A129
Li, A; Liu, T
收藏  |  浏览/下载:31/0  |  提交时间:2014/04/25
Contact-impact analys with clearance hinge in flexible multi-body system (EI CONFERENCE) 会议论文  OAI收割
2nd Annual Conference on Electrical and Control Engineering, ICECE 2011, September 16, 2011 - September 18, 2011, Yichang, China
Ge M.; Jia H.; Liu B.
收藏  |  浏览/下载:56/0  |  提交时间:2013/03/25
Hinge in mechanical systems exist small clearance and contact deformation  After consideration of flexible components  cause the system to the wear and tear  impact force reduced at the clearance  noise  contact time increased  vibration  contact-impact areas expand and clearance also caused disturbance of the rod angular velocity of the linkage. 2011 IEEE.  reliability reduce or even failure[1]. Therefore  the hinge clearance and the impact of flexible components in kinetic models should be considered. In this paper  a nonlinear spring-damper hinge clearance model is considered to establish mechanical system structure of dynamic equations[46]  through a four-bar linkage hinge with multi-clearance rotation of ADAMS dynamic simulation for dynamics simulation study. Simulation results show that hinge clearance and link flexible in Four-link mechanism dynamics have a great impact on performance: connection with the clearance lead to pin holes to produce a series of collisions  and a larger initial impact force  
Central hole effect on Whispering-Gallery-Mode of triangular lattice photonic crystal microcavity (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  
Zhang Y.;  Wang L.;  Wang L.;  Wang L.;  Wang Z.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
Electrophoresis deposition of carbon nanotubes for triode type CNT-FED cathode (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
作者:  
Song H.;  Jiang H.;  Li Z.;  Li Z.
收藏  |  浏览/下载:256/0  |  提交时间:2013/03/25
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.