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	Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 OAI收割 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China 作者: Qin L. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current efficiency emission wavelength and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results it is shown that the device can still operate at high temperature condition.
	The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
	High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
	Vertical-cavity surface-emitting lasers with periodic gain structure (EI CONFERENCE) 会议论文 OAI收割作者: Wang L.; Wang L.; Wang L.; Qin L.; Sun Y. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 The periodic gain structure is used as the active region of vertical-cavity surface-emitting lasers which can enhance the effective coupling between gain regions and internal optical field. The high device performance is achieved. The maximum continuous-wave output power of large aperture device with active diameter up to 400 m is as high as 1.41 W at room temperature. The low threshold current is only 0.5 A which is lower than that of the conventional device with three quantum wells. 2006 Elsevier B.V. All rights reserved.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
	High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current which is very favorable for focusing or collmating optics.
	On the Controlling Factor of Catalyst Temperature in C3H8-Air Mixture 期刊论文 OAI收割 JOURNAL OF THERMAL SCIENCE, 2001, 卷号: 10, 期号: 1, 页码: 87,91 Goro ONUMA; Mitsuaki TANABE; Kiyoshi AOKI 收藏 \| 浏览/下载：11/0 \| 提交时间：2013/03/12 catalytic combustion surface temperature.
	On the Controlling Factor of Catalyst Temperature in C3H8-Air Mixture 期刊论文 OAI收割 JOURNAL OF THERMAL SCIENCE, 2001, 卷号: 10, 期号: 1, 页码: 87,91 作者: Goro ONUMA; Mitsuaki TANABE; Kiyoshi AOKI \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/12 Catalytic Combustion Surface Temperature.
	Experimental and Three-Dimensional Numerical Study on Under-Expanded Imping Jets 期刊论文 OAI收割 JOURNAL OF THERMAL SCIENCE, 2000, 卷号: 9, 期号: 4, 页码: 316，321 Minoru Yaga; Kenshi Ueda; Tomohiro Ohshiro; Izuru Senaha; Kenyu Oyakawa 收藏 \| 浏览/下载：13/0 \| 提交时间：2013/03/12 compressible flow shock wave under-expanded impinging jet CFD surface temperature.