中国科学院机构知识库网格
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Stimulatory and inhibitory effects of light on Cereus repandus (Cactaceae) seed germination are strongly dependent on spectral quality 期刊论文  OAI收割
SEED SCIENCE RESEARCH, 2022, 页码: PII S0960258522000150
作者:  
Yang, X-Y;  Pritchard, Hugh W.
  |  收藏  |  浏览/下载:10/0  |  提交时间:2024/04/30
Predominant patterns of splicing evolution on human, chimpanzee and macaque evolutionary lineages 期刊论文  OAI收割
HUMAN MOLECULAR GENETICS, 2018, 卷号: 27, 期号: 8, 页码: 1474-1485
作者:  
Xiong, Jieyi;  Jiang, Xi;  Gao, Yang;  Sun, Jing;  Huang, Shuyun
  |  收藏  |  浏览/下载:24/0  |  提交时间:2020/12/09
Consistent leaf respiratory response to experimental warming of three North American deciduous trees: a comparison across seasons, years, habitats and sites 期刊论文  OAI收割
TREE PHYSIOLOGY, 2017, 卷号: 37, 期号: 3, 页码: 285-300
作者:  
Rich, Roy L.;  Montgomery, Rebecca A.;  Reich, Peter B.;  Wei, XR (reprint author), Northwest A&F Univ, State Key Lab Soil Eros & Dryland Farming Loess P, Xinong Rd 26, Yangling 712100, Peoples R China.;  Wei, XR
  |  收藏  |  浏览/下载:39/0  |  提交时间:2018/04/12
Can miscanthus C-4 photosynthesis compete with festulolium C-3 photosynthesis in a temperate climate? 期刊论文  OAI收割
GLOBAL CHANGE BIOLOGY BIOENERGY, 2017, 卷号: 9, 期号: 1, 页码: 18-30
作者:  
Jiao, Xiurong;  Korup, Kirsten;  Andersen, Mathias Neumann;  Laerke, Poul Erik;  Jorgensen, Uffe
  |  收藏  |  浏览/下载:32/0  |  提交时间:2020/12/09
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:31/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
A comparative analysis of photosynthetic characteristics of hulless barley at two altitudes on the Tibetan Plateau SCI/SSCI论文  OAI收割
2011
Fan Y. Z.; Zhong Z. M.; Zhang X. Z.
收藏  |  浏览/下载:33/0  |  提交时间:2012/06/08