机构

• 物理研究所 [2]
• 上海光学精密机械研究... [2]
• 长春光学精密机械与物... [1]
• 大连化学物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [4]
• 会议论文 [1]
• 学位论文 [1]

发表日期

• 2018 [1]
• 2012 [1]
• 2009 [2]
• 2007 [1]

学科主题

• 光存储 [1]
• 光学工程 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Research on the adjusting technology of the thin disk laser 期刊论文  OAI收割 OPTIK, 2018, 卷号: 157, 页码: 400-405 作者:  Liu, Rui;  Zhang, Xihe;  Gong, Faquan;  Jia, Yong;  Li, Gang   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/06/20 Thin Disk Laser  Adjusting Technology  Zemax   Diode-pumped passively mode-locked femtosecond Yb:(Y0.9La0.1)(2)O-3 ceramic laser 期刊论文  OAI收割 CHINESE OPTICS LETTERS, 2012, 卷号: 10, 期号: 12 Zhu, JF; Wang, ZH; Wang, Q; Zhang, ZG; Yang, QH; Yang, JH; Ma, YF; Wei, ZY 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/17 THIN-DISK LASER  PULSES  POWER  NM   Numerical and experimental investigation of a continuous-wave and passively mode-locked Yb:YAG laser at a wavelength of 1.05 mu m 期刊论文  OAI收割 APPLIED OPTICS, 2009, 卷号: 48, 期号: 31, 页码: 5978 Zhou, BB; Wei, ZY; Li, DH; Teng, H; Bourdet, GL 收藏  |  浏览/下载：23/0  |  提交时间：2013/09/24 THIN-DISK LASER  LEVEL  POWER  GAIN   Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials 期刊论文  OAI收割 appl. phys. a-mater. sci. process., 2009, 卷号: 94, 期号: 3, 页码: 627, 631 Jiao Xinbing; 魏劲松; 干福熹; Xiao Mufei 收藏  |  浏览/下载：1501/259  |  提交时间：2009/09/22 LASER-INDUCED CRYSTALLIZATION  RICH AGINSBTE FILMS  CHANGE OPTICAL DISK  CHANGE MEDIA  DATA-STORAGE  THIN-FILMS  SUPERRESOLUTION  NUCLEATION  MICROSCOPY  GE2SB2TE5   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.   倍半氧化物激光材料低损伤加工研究 学位论文  OAI收割 作者:     |  收藏  |  浏览/下载：33/0  |  提交时间：2018/12/26 光学加工  Optical processing  碟片激光器  thin-disk laser  YAG  YAG  Yb:LuScO3  Yb:LuScO3  激光损伤阈值  laser damage threshold