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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [2]
长春光学精密机械与物... [1]
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OAI收割 [2]
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期刊论文 [2]
会议论文 [1]
发表日期
2006 [3]
学科主题
半导体物理 [1]
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Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures
期刊论文
iSwitch采集
Journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
作者:
Kong Lingmin
;
Cai Jiafa
;
Wu Zhengyun
;
Gong Zheng
;
Fang Zhidan
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Ingaas layer
Inas quantum dots
Time-resolved pl spectra
Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE)
会议论文
OAI收割
Wei Z. P.
;
Lu Y. M.
;
Shen D. Z.
;
Wu C. X.
;
Zhang Z. Z.
;
Zhao D. X.
;
Zhang J. Y.
;
Fan X. W.
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  |  
浏览/下载:32/0
  |  
提交时间:2013/03/25
A set of ZnO/MgZnO heterostructures with well widths
Lw
varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton
while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness
the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
期刊论文
OAI收割
journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
Kong LM (Kong Lingmin)
;
Cai JF (Cai Jiafa)
;
Wu ZY (Wu Zhengyun)
;
Gong Z (Gong Zheng)
;
Fang ZD (Fang Zhidan)
;
Niu ZC (Niu Zhichuan)
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  |  
浏览/下载:70/0
  |  
提交时间:2010/04/11
InGaAs layer
InAs quantum dots
time-resolved PL spectra
1.3 MU-M
CARRIER DYNAMICS
LASERS
GROWTH
WAVELENGTH
EMISSION
ISLANDS
LAYERS
SIZE