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CAS IR Grid
机构
大连化学物理研究所 [4]
沈阳自动化研究所 [2]
长春光学精密机械与物... [1]
半导体研究所 [1]
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OAI收割 [8]
内容类型
期刊论文 [6]
会议论文 [2]
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2019 [1]
2018 [1]
2017 [2]
2007 [2]
2006 [1]
2003 [1]
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学科主题
半导体物理 [1]
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Microscopic Machine Vision Based Degradation Monitoring of Low-Voltage Electromagnetic Coil Insulation Using Ensemble Learning in a Membrane Computing Framework
期刊论文
OAI收割
IEEE ACCESS, 2019, 卷号: 7, 页码: 97216-97241
作者:
Jiang T(蒋涛)
;
Li C(李晨)
;
Kong FJ(孔樊杰)
;
Wang K(王锴)
;
Xu AD(徐皑冬)
  |  
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2019/08/29
Low-voltage electromagnetic coil
insulation degradation monitoring
ensemble learning
machine vision
membrane computing
microscopic image analysis
feature extraction
Degradation Monitoring of Low-voltage Electromagnetic Coil Insulation Based on Microscopic Image Analysis
会议论文
OAI收割
Chongqing, China, October 26-28, 2018
作者:
Kong FJ(孔樊杰)
;
Wang K(王锴)
;
Qi SL(齐守良)
;
Guo HF(郭海丰)
;
Xu AD(徐皑冬)
  |  
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2018/12/25
low-voltage electromagnetic coil
insulation degradation monitoring
microscopic image analysis
Enhanced durability of sulfonated poly (ether ether ketones)-based polymer electrolyte membranes by a multi-layer composite technology
期刊论文
OAI收割
SOLID STATE IONICS, 2017, 卷号: 309, 页码: 33-40
作者:
Jiang, Yongyi
;
Hou, Ming
;
Hao, Jinkai
;
Yi, Baolian
;
Wang, Zhen
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2017/12/20
Multi-layer composite membrane
Transition layer
Chemical degradation
Accelerated open circuit voltage tests
Durability
Enhanced durability of sulfonated poly (ether ether ketones)-based polymer electrolyte membranes by a multi-layer composite technology
期刊论文
OAI收割
SOLID STATE IONICS, 2017, 卷号: 309, 页码: 33-40
作者:
Jiang, Yongyi
;
Hou, Ming
;
Hao, Jinkai
;
Yi, Baolian
;
Wang, Zhen
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2017/12/20
Multi-layer composite membrane
Transition layer
Chemical degradation
Accelerated open circuit voltage tests
Durability
Effects of reverse voltage and subzero startup on the membrane electrode assembly of a PEMFC
期刊论文
OAI收割
journal of power sources, 2007, 卷号: 165, 期号: 1, 页码: 287-292
作者:
Wang, Hongwei
;
Hou, Junbo
;
Yu, Hongmei
;
Sun, Shucheng
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/11/30
degradation
reverse voltage
MEA
hydrogen pump
PEMFC
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE)
会议论文
OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.
;
Gao W.
;
Liao Y.
;
Jing H.
;
Fu G.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress
it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping
a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper
controlling different flow ratio of source gas SiH4 and NH3
and a great deal of tests (ellipsometer
infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators
three different capacitance samples in MIS structure were done
degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation
this result indicated that the defect density of this type SiN x was smaller
and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT
SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
500h continuous aging life test on PBI/H3PO4 high-temperature PEMFC
期刊论文
OAI收割
international journal of hydrogen energy, 2006, 卷号: 31, 期号: 13, 页码: 1855-1862
作者:
Hu, Jingwei
;
Zhang, Huamin
;
Zhai, Yunfeng
;
Liu, Gang
;
Yi, Baolian
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2015/11/11
high-temperature PEMFC
PBI/H3PO4
voltage degradation
internal resistance
performance degradation
Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors
期刊论文
OAI收割
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 10, 页码: 6491-6495
Zhang GQ
;
Sun P
;
Zou Q
;
Mei X
;
Ruda HE
;
Gu Q
;
Yu XF
;
Ren DY
;
Yan RL
收藏
  |  
浏览/下载:1286/12
  |  
提交时间:2010/08/12
ionizing radiation
dose rate
PZT
dielectric constant
coercive field
C-V curves
remanent polarization
FERROELECTRIC PZT CAPACITORS
IONIZING-RADIATION
BORDER TRAPS
TRANSISTORS
DEGRADATION
MECHANISMS
MEMORIES
VOLTAGE
DEVICES
RAY