中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Microscopic Machine Vision Based Degradation Monitoring of Low-Voltage Electromagnetic Coil Insulation Using Ensemble Learning in a Membrane Computing Framework 期刊论文  OAI收割
IEEE ACCESS, 2019, 卷号: 7, 页码: 97216-97241
作者:  
Jiang T(蒋涛);  Li C(李晨);  Kong FJ(孔樊杰);  Wang K(王锴);  Xu AD(徐皑冬)
  |  收藏  |  浏览/下载:55/0  |  提交时间:2019/08/29
Degradation Monitoring of Low-voltage Electromagnetic Coil Insulation Based on Microscopic Image Analysis 会议论文  OAI收割
Chongqing, China, October 26-28, 2018
作者:  
Kong FJ(孔樊杰);  Wang K(王锴);  Qi SL(齐守良);  Guo HF(郭海丰);  Xu AD(徐皑冬)
  |  收藏  |  浏览/下载:48/0  |  提交时间:2018/12/25
Enhanced durability of sulfonated poly (ether ether ketones)-based polymer electrolyte membranes by a multi-layer composite technology 期刊论文  OAI收割
SOLID STATE IONICS, 2017, 卷号: 309, 页码: 33-40
作者:  
Jiang, Yongyi;  Hou, Ming;  Hao, Jinkai;  Yi, Baolian;  Wang, Zhen
收藏  |  浏览/下载:39/0  |  提交时间:2017/12/20
Enhanced durability of sulfonated poly (ether ether ketones)-based polymer electrolyte membranes by a multi-layer composite technology 期刊论文  OAI收割
SOLID STATE IONICS, 2017, 卷号: 309, 页码: 33-40
作者:  
Jiang, Yongyi;  Hou, Ming;  Hao, Jinkai;  Yi, Baolian;  Wang, Zhen
收藏  |  浏览/下载:44/0  |  提交时间:2017/12/20
Effects of reverse voltage and subzero startup on the membrane electrode assembly of a PEMFC 期刊论文  OAI收割
journal of power sources, 2007, 卷号: 165, 期号: 1, 页码: 287-292
作者:  
Wang, Hongwei;  Hou, Junbo;  Yu, Hongmei;  Sun, Shucheng
收藏  |  浏览/下载:30/0  |  提交时间:2010/11/30
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
500h continuous aging life test on PBI/H3PO4 high-temperature PEMFC 期刊论文  OAI收割
international journal of hydrogen energy, 2006, 卷号: 31, 期号: 13, 页码: 1855-1862
作者:  
Hu, Jingwei;  Zhang, Huamin;  Zhai, Yunfeng;  Liu, Gang;  Yi, Baolian
收藏  |  浏览/下载:41/0  |  提交时间:2015/11/11
Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors 期刊论文  OAI收割
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 10, 页码: 6491-6495
Zhang GQ; Sun P; Zou Q; Mei X; Ruda HE; Gu Q; Yu XF; Ren DY; Yan RL
收藏  |  浏览/下载:1286/12  |  提交时间:2010/08/12