中国科学院机构知识库网格系统: 检索

KW-output high beam quality diode laser array source (EI CONFERENCE) 会议论文 OAI收割
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China
作者: Zhang J.; Wang L.; Wang L.; Wang L.; Liu Y.

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With the advantages of small volume light weight high efficiency and long lifespan diode laser has been widely applied to industrial processing. Presently for laser used as processing light source needs to amount to dozens of KW per cm2 of power density how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output coupling efficiency at 90% 11mm2 of light spot through experiments which enables diode laser to be directly applied to cladding welding and so on. 2012 IEEE.

Potential sodium D(2) resonance radiation generated by intra-cavity SHG of a c-cut Nd:YVO(4) self-Raman laser 期刊论文 OAI收割
Optics Express, 2011, 卷号: 19, 期号: 7, 页码: 6341-6346
Y. M. Duan; H. Y. Zhu; C. H. Huang; G. Zhang; Y. Wei

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sum-frequency generation w output power continuous-wave wavelength-versatile high-efficiency yellow-light nm light emission ndgdvo4

Experiments of second harmonic generation output in pulsed TEA CO 2 laser (EI CONFERENCE) 会议论文 OAI收割
High-Power Lasers and Applications V, October 18, 2010 - October 19, 2010, Beijing, China
作者: Li D.

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It is always the hot subject to realize the output of high-power laser in the range of 3-5m wavelength. This rang of wave band has greatly important applications in military because it located in the atmosphere window. Generally there are two ways to obtain this range of laser wavelength. One way is through optical parameter oscillation (OPO) from shorter laser wavelength and the other is through second harmonic generation (SHG) from longer laser wavelength. Firstly the comparison between tow nonlinear crystals ZnGeP2 and AgGaSe2 is conducted for their nonlinear coefficient and damaging threshold in theory. The theoretical results show that the crystal AgGaSe 2 is more suitable for the SHG of pulsed TEA CO2 laser. When using pulsed TEA CO2 laser with wavelength of 9.3m to pumping AgGaSe2 SHG crystal the wavelength of 4.65m is obtained. In the condition of repetition rate 100Hz the upmost output power of single pulse is up to level of 1W which corresponding efficiency of SHG is about 6%. The experimental results show that the polarization of laser beam has greatly influence on the SHG output of the crystal. Under the radiation of 3MW/cm 2 from fundamental wave and the right position for maximal SHG output in the crystal when polarization of laser beam rotates 4.5 the SHG output of energy decrease about 30%. The research of this paper will make a foundation for further development of mid-infrared laser. 2010 Copyright SPIE - The International Society for Optical Engineering.

High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang X.; Wang L.; Wang L.; Wang L.; Wang Y.

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High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle the average driving power in the laser chip is quite low so the heating effect cemiconductor laser is very small using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.

Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W.

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Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.

High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Changling Y.; Guoguang L.; Chunfeng H.; Li Q.

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High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.

High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者: Zhang Y.; Liu Y.; Liu Y.; Liu Y.; Qin L.

收藏 | 浏览/下载：31/0 | 提交时间：2013/03/25

High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.

Optical thin films for high power LD-pumped Nd:YVO4 457nm blue laser (EI CONFERENCE) 会议论文 OAI收割
ICO20: Optical Design and Fabrication, August 21, 2005 - August 26, 2005, Changchun, China
Bu Y.; Zheng Q.; Xue Q.; Qian L.

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The expanding field of LD-pumped solid state lasers forms an extraordinary challenge for developing the optical coatings. Optical thin films for LD-pumped Nd:YVO4/LBO blue laser at 457nm was presented in this paper based on lower gain laser line action theory including spectral beam dividers and doubling antireflecting multilayer coatings. To achieve 914nm laser action and 457nm blue light high output power the coating specifications of laser resonator was analyzed. The transmittance/reflectance spectrum request was effectively separated by adopting high tuned radio stack simultaneously the spectrum request was reasonably distributed on the two resonator facet reflectivity for restrain the other laser lines such as1064nm and1342nm. The dielectric high reflective laser mirror and antireflecting coatings for 457nm laser were manufactured by double ion beam sputtering technique which is controlled by a time-power monitoring. Using type-I critical phase-matching LBO crystal 457nm blue laser is obtained by 914nm intracavity frequency doubling. The maximum laser output power of 1.5W is obtained when incident pump laser of 15W is used.

Vertical-cavity surface-emitting lasers with periodic gain structure (EI CONFERENCE) 会议论文 OAI收割
作者: Wang L.; Wang L.; Wang L.; Qin L.; Sun Y.

收藏 | 浏览/下载：19/0 | 提交时间：2013/03/25

The periodic gain structure is used as the active region of vertical-cavity surface-emitting lasers which can enhance the effective coupling between gain regions and internal optical field. The high device performance is achieved. The maximum continuous-wave output power of large aperture device with active diameter up to 400 m is as high as 1.41 W at room temperature. The low threshold current is only 0.5 A which is lower than that of the conventional device with three quantum wells. 2006 Elsevier B.V. All rights reserved.

High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y.

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/25

Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.