机构

• 半导体研究所 [6]
• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 福建物质结构研究所 [1]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [2]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2010 [3]
• 2009 [2]
• 2008 [1]
• 2005 [1]
• 2003 [2]
• 2001 [1]
• 更多

学科主题

• 光电子学 [2]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers 期刊论文  iSwitch采集 Acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1035-1039 作者:  Liu An-Jin;  Xing Ming-Xin;  Qu Hong-Wei;  Chen Wei;  Zhou Wen-Jun 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Photonic crystal waveguide  Vertical-cavity surface-emitting lasers  Divergence angle   The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers 期刊论文  OAI收割 Journal of Applied Physics, 2010, 卷号: 107, 期号: 1 S. D. Wu, Y. G. Cao, S. Tomic and F. Ishikawa 收藏  |  浏览/下载：21/0  |  提交时间：2012/11/02 aluminium compounds  energy gap  gallium arsenide  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  valence  bands  waveguide lasers  threshold-current-density  band parameters  tensile strain  temperature  subbands  semiconductors  performance  spectra  leakage  diode   Control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers 期刊论文  OAI收割 acta physica sinica, 59 (2): 1035-1039 feb 2010, 2010, 卷号: 59, 期号: 2, 页码: 1035-1039 Liu AJ (Liu An-Jin); Xing MX (Xing Ming-Xin); Qu HW (Qu Hong-Wei); Chen W (Chen Wei); Zhou WJ (Zhou Wen-Jun); Zheng WH (Zheng Wan-Hua) 收藏  |  浏览/下载：228/55  |  提交时间：2010/04/21 photonic crystal waveguide  vertical-cavity surface-emitting lasers  divergence angle  SINGLE-MODE   Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2 作者:  Zhang LQ;  Yang H(杨辉);  Zhang LQ;  Zhang SM 收藏  |  浏览/下载：35/0  |  提交时间：2010/01/15 aluminium compounds  claddings  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  refractive index  waveguide lasers   Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104 作者:  Zhu JJ;  Zhang SM;  Jiang DS;  Zhao DG;  Yang H 收藏  |  浏览/下载：205/56  |  提交时间：2010/03/08 aluminium compounds  claddings  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  refractive index  waveguide lasers   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.   Optical properties of zirconia-titania-ORMOSIL films for temperature tuning distributed feedback waveguide lasers 期刊论文  OAI收割 opt. commun., 2005, 卷号: 251, 期号: 4~6, 页码: 322, 327 朱小磊; Shi L; Chan JL; Wang J; Ye C; Lo DN 收藏  |  浏览/下载：1024/174  |  提交时间：2009/09/18 thin film  waveguide  dye lasers  temperature tuning   Selective-area mocvd growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide 期刊论文  iSwitch采集 Journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 583-587 作者:  Qiu, WB;  Wang, W;  Dong, J;  Zhou, F;  Zhang, JY 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Self-alignment  Spotsize converter  Tapered waveguide  Selective area growth  Distributed feeback lasers   Selective-area MOCVD growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 583-587 Qiu WB; Wang W; Dong J; Zhou F; Zhang JY 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 self-alignment  spotsize converter  tapered waveguide  selective area growth  distributed feeback lasers   Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers 会议论文  OAI收割 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 作者:  Yu LJ 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 semiconductor optical amplifier  strained quantum well  optical waveguide  polarization  QUANTUM-WELL LASERS