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	Station mode for attitude determination of small-multi-target with high speed (EI CONFERENCE) 会议论文 OAI收割 2010 International Conference on E-Product E-Service and E-Entertainment, ICEEE2010, November 7, 2010 - November 9, 2010, Henan, China 作者: Wang J.; Zhao L.; Li M. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 A key problem of attitude measurement of small-multi-target with high speed is how to decide the optimum of the CMOS stations. A multi-CMOS station mode is designed in this paper multiple CMOS videos were placed on two parallel sides in measurement system every two CMOS form an intersection viewing field multiple viewing field join to cover shooting range which can augment Effective Viewing Field(EVF) increase capture ratio of objects with high speed and measurement precision of small objects. When an object passes through the joint area it will be imaged separately on each CMOS focal plane. Multiple CMOS videos were triggered synchronously a sequence of image information was extracted the target attitude was confirmed by digital image processing technology. The merit of station mode is low cost large measurement scope extending freely and so on. 2010 IEEE.
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
	Geometrical modulation transfer function of different active pixel of CMOS APS (EI CONFERENCE) 会议论文 OAI收割 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, November 2, 2005 - November 5, 2005, Zian, China 作者: Li J.; Liu J.; Liu J.; Liu J.; Li J. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 The geometrical Modulation Transfer Function (MTF) of CMOS APS (active pixel sensor) is analyzed in this paper. Advanced APS have been designed and fabricated where different pixel shapes such as square rectangle and L shape were placed because the amplifier circuit and other function circuits inter pixel of APS take up some pixel area. MTF is an important figure of merit in focal plane array imaging sensors. Research on analyzing the MTF for the proper pixel shape is currently in progress for a centroidal configuration of a target position. MTF will give us a more complete understanding of the tradeoffs opposed by the different pixel designs and by the signal processing conditions. Based on image sensor sampling and reconstructing model the MTF expression of any active pixel shape has been deduced in this paper. According to actual pixel shape three different active area pixels were analyzed they were square rectangle and L shape their Fill Factor (FF) is 30% 44% and 55% respectively. Results of simulation experiments indicate that different pixel geometrical characteristics contribute significantly to the figures of their MTF. Different geometrical shape of active sensitive area of pixel and different station in pixel would influence MTF figures. The analysis results are important in designing better APS pixel and more important in analyzing imaging system performance of APS subpixel precision system.