中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共6条，第1-6条

帮助

条数/页：排序方式：
	Normal state transport properties in single crystals of ba1-xkxfe2as2 and ndfeaso1-xfx 期刊论文 iSwitch采集 Physica c-superconductivity and its applications, 2009, 卷号: 469, 期号: 9-12, 页码: 477-484 作者: Luo, H. Q.; Cheng, P.; Wang, Z. S.; Yang, H.; Jia, Y. 收藏 \| 浏览/下载：25/0 \| 提交时间：2019/05/09 Feas-based superconductors Single crystals Transport Hall effect Magnetoresisitance
	An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application 期刊论文 iSwitch采集 Solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者: Wang, X. L.; Chen, T. S.; Xiao, H. L.; Tang, J.; Ran, J. X. 收藏 \| 浏览/下载：22/0 \| 提交时间：2019/05/12 Algan/aln/gan Hemt Mocvd Sic substrate Power device
	An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文 OAI收割 SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者: Wang, X. L.; Chen, T. S.; Xiao, H. L.; Tang, J.; Ran, J. X. \| 收藏 \| 浏览/下载：7/0 \| 提交时间：2021/02/02 AlGaN/AlN/GaN HEMT MOCVD SiC substrate Power device
	A Pilot Study on Low Power Pulse Rate Detection Based on Compressive Sampling 会议论文 OAI收割 Annual International Conference of the IEEE-Engineering-in-Medicine-and-Biology-Society 作者: Huang B. Y.; Wang L.; Wang B.; Lin S. J.; Wu D. 收藏 \| 浏览/下载：9/0 \| 提交时间：2015/08/21
	Clean MgB2 thin films on different types single-crystal substrate fabricated by hybrid physical-chemical vapor deposition 期刊论文 OAI收割 SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2009, 卷号: 22, 期号: 2 Zhuang, CG; Tan, T; Wang, YZ; Bai, SS; Ma, XB; Yang, H; Zhang, GH; He, YS; Wen, HH; Xi, XX; Feng, QR; Gan, ZZ 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/09/17 STAINLESS-STEEL SUBSTRATE SUPERCONDUCTIVITY DEPENDENCE PROGRESS
	An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文 OAI收割 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者: Zhang ML; Hou QF 收藏 \| 浏览/下载：129/30 \| 提交时间：2010/03/08 AlGaN/AlN/GaN HEMT MOCVD SiC substrate Power device