机构

• 半导体研究所 [3]
• 力学研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [5]

内容类型

• 会议论文 [5]

发表日期

• 2021 [1]
• 2011 [1]
• 2009 [1]
• 2002 [1]
• 2000 [1]

学科主题

• 半导体材料 [2]
• 半导体物理 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Numerical Simulation Research on Thermal Response Characteristics of E-type Coaxial Thermocouples 会议论文  OAI收割 长沙, 2021/09/12 作者:  Qi L(齐力);  Han GL(韩桂来);  Jiang ZL(姜宗林)   |  收藏  |  浏览/下载：13/0  |  提交时间：2022/07/06 气动热  同轴热电偶  数值模拟   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY   Electronic characteristics of InAs self-assembled quantum dots 会议论文  OAI收割 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY