中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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硅基III-V族半导体材料的外延生长及量子点激光器研究 学位论文  OAI收割
博士, 北京: 中国科学院研究生院, 2016
刘广政
收藏  |  浏览/下载:499/0  |  提交时间:2016/06/03
AlGaN基深紫外发光二极管和激光器关键技术研究 学位论文  OAI收割
博士, 北京: 中国科学院研究生院, 2016
田迎冬
收藏  |  浏览/下载:73/0  |  提交时间:2016/06/01
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文  OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li, Z (Li, Z.); Li, CJ (Li, C. J.)
收藏  |  浏览/下载:304/15  |  提交时间:2010/03/29
DLTS  
Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts 期刊论文  OAI收割
semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 606-610
Luo Q; Du JF; Yang MH; Wang LC; Jin T; Yu Q
收藏  |  浏览/下载:55/14  |  提交时间:2010/03/17
Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文  OAI收割
1998 nuclear science symposium (nss), toronto, canada, nov 08-14, 1998
Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ
收藏  |  浏览/下载:17/0  |  提交时间:2010/11/15
Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 期刊论文  OAI收割
ieee transactions on nuclear science, 1999, 卷号: 46, 期号: 3 part 1, 页码: 221-227
Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ
收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES 期刊论文  OAI收割
optics and laser technology, 1994, 卷号: 26, 期号: 4, 页码: 271-280
CAO M; LI H; JUN A; LUO F; JUN X; WU L; GAO W
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/15