中国科学院机构知识库网格系统: 检索

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	Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文 OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 6, 页码: 64001, 64001 作者: Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua; Zhang, R.(zhangrenping@semi.ac.cn) \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2012/06/14 Aspect ratio Current density Drain current Electric network analysis Electric network analyzers Electron mobility Fabrication Gallium nitride Ohmic contacts Passivation Silicon nitride Silicon wafers Aspect Ratio Current Density Drain Current Electric Network Analysis Electric Network Analyzers Electron Mobility Fabrication Gallium Nitride Ohmic Contacts Passivation Silicon Nitride Silicon Wafers
	Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid 期刊论文 OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 24, 页码: article no.245423, Article no.245423 作者: Zhao WJ; Tan PH; Zhang J; Liu JA; Zhao, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn \| 收藏 \| 浏览/下载：79/9 \| 提交时间：2011/07/05 RAMAN-SPECTROSCOPY BILAYER GRAPHENE GRAPHITE SCATTERING SPECTRA CARBON FILMS Raman-spectroscopy Bilayer Graphene Graphite Scattering Spectra Carbon Films
	Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals 期刊论文 OAI收割 epl, 2008, 卷号: 84, 期号: 6, 页码: art. no. 67003 Xu XS; Chen HD; Yamada T; Otomo A 收藏 \| 浏览/下载：382/110 \| 提交时间：2010/03/08 BAND-GAP MATERIALS SPONTANEOUS EMISSION QUANTUM-DOT FLUORESCENCE
	Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文 OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302 作者: Jiang DS 收藏 \| 浏览/下载：36/0 \| 提交时间：2010/04/11 ROOM-TEMPERATURE SILICON SEMICONDUCTORS DISLOCATIONS SPECTRA