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Chinese Academy of Sciences Institutional Repositories Grid
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  • 微电子学 [5]
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Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors 期刊论文  OAI收割
j. appl. phys, 2015, 卷号: 117, 页码: 034505
Liuhong Ma; Weihua Han; Hao Wang; Wenting Hong; Qifeng Lyu; Xiang Yang; Fuhua Yang
收藏  |  浏览/下载:15/0  |  提交时间:2016/04/08
Electron transport characteristics of silicon nanowires by metal-assisted chemical etching 期刊论文  OAI收割
aip advances, 2014, 卷号: 4, 期号: 3, 页码: 031307
Qi, YY; Wang, Z; Zhang, ML; Wang, XD; Ji, A; Yang, FH
收藏  |  浏览/下载:18/0  |  提交时间:2015/04/02
Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors 期刊论文  OAI收割
ieee electron device letters, 2013, 卷号: 34, 期号: 5, 页码: 581-583
Li, Xiaoming; Han, Weihua; Ma, Liuhong; Wang, Hao; Zhang, Yanbo; Yang, Fuhua
收藏  |  浏览/下载:9/0  |  提交时间:2013/08/27
Low-Temperature Quantum Transport Characteristics in Single n-ChannelJunctionless Nanowire Transistors 期刊论文  OAI收割
electron device letters, ieee, 2013, 卷号: 34, 期号: 5, 页码: 581-583
Li, Xiaoming; Han, Weihua; Ma, Liuhong; Wang, Hao; Zhang, Yanbo; Yang, Fuhua
收藏  |  浏览/下载:9/0  |  提交时间:2014/03/26
Compact non-binary fast adders using single-electron devices 期刊论文  OAI收割
microelectronics journal, 2009, 卷号: 40, 期号: 8, 页码: 1244-1254
Zhang WC; Wu NJ
收藏  |  浏览/下载:115/21  |  提交时间:2010/03/08