中国科学院机构知识库网格系统: 检索

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	Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文 OAI收割 international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003 Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC 收藏 \| 浏览/下载：18/1 \| 提交时间：2010/10/29 transmission electron microscopy electron energy loss spectroscopy molecular beam epitaxy gallium nitride CHEMICAL-VAPOR-DEPOSITION EPITAXY LAYER
	Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文 OAI收割 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G 收藏 \| 浏览/下载：18/0 \| 提交时间：2010/10/29 POLYMORPHOUS SILICON LIGHT-SCATTERING THIN-FILMS SI MICROCRYSTALLINITY ABSORPTION STATES
	Performance of the Kunming SLR Station 会议论文 OAI收割 N/A, N/A 作者: Xiong YH(熊耀恒); Wang W(王武); Jiang CG(姜崇国); Zheng XM(郑向明); He MC(何妙婵) \| 收藏 \| 浏览/下载：10/0 \| 提交时间：2016/10/08
	Epitaxial growth of SiC on complex substrates 会议论文 OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏 \| 浏览/下载：15/0 \| 提交时间：2010/11/15 optical microscopy X-ray diffraction molecular beam epitaxy semiconducting silicon compounds SAPPHIRE DEPOSITION FILMS
	Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏 \| 浏览/下载：10/0 \| 提交时间：2010/11/15 X-ray diffraction molecular beam epitaxy semiconducting silicon compounds LOW-TEMPERATURE GROWTH FILMS