机构

• 宁波材料技术与工程研... [2]
• 长春光学精密机械与物... [1]
• 电子学研究所 [1]
• 大连化学物理研究所 [1]
• 半导体研究所 [1]
• 沈阳自动化研究所 [1]
• 更多

采集方式

• OAI收割 [7]

内容类型

• 会议论文 [7]

发表日期

• 2013 [2]
• 2012 [1]
• 2011 [2]
• 2006 [1]
• 1998 [1]

学科主题

• Physics [1]
• 半导体物理 [1]
• 物理化学 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Photoelectronic behaviors of bilayer ultrathin films manganite-based heterojunctions 会议论文  OAI收割 JAN 14-18, 2013 作者:  Gao, W. W.;  Hu, L.;  Sun, Y. P.;  Sun, J. R.;  Shen, J.   |  收藏  |  浏览/下载：8/0  |  提交时间：2018/01/12 Photoelectronic behaviors of bilayer ultrathin films manganite-based heterojunctions 会议论文  OAI收割 JAN 14-18, 2013 作者:  Gao, W. W.;  Hu, L.;  Sun, Y. P.;  Sun, J. R.;  Shen, J.   |  收藏  |  浏览/下载：12/0  |  提交时间：2021/12/02 Multiscale modeling and simulation for optimizing polymer bulk heterojunction solar cells 会议论文  OAI收割 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United states, June 3-8, 2012 作者:  Wei FN(魏发南);  Liu, Liming;  Liu LQ(刘连庆);  Li GY(李广勇) 收藏  |  浏览/下载：13/0  |  提交时间：2014/04/16 Carrier transport  Computer simulation  Light absorption  Monte Carlo methods  Morphology  Optimization  Polymers  Solar cells   Fabrication and H2S Sensing Properties of CuO/SnO2 Heterojunctions Based on Porous Electrospun Fibers 会议论文  OAI收割 The 13th International Meeting on Chemical Sensors, 澳大利亚, 2010-07-11 赵燕; 何秀丽; 李建平 收藏  |  浏览/下载：13/0  |  提交时间：2011/06/03 Photocatalytic Hydrogen Production by Utilizing Solar Energy 会议论文  OAI收割 the royal society discussion meeting, london, 2011-11-14 李灿 收藏  |  浏览/下载：17/0  |  提交时间：2012/07/09 Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文  OAI收割 13th international conference on high magnetic fields in semiconductor physics, nijmegen, netherlands, aug 10-14, 1998 Wang YJ; Jiang ZX; McCombe BD; Peeters FM; Wu XG; Hai GQ; Eustis TJ; Schaff W 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 cyclotron resonance  electron-phonon interaction  electron-electron interaction  high magnetic fields  EXCHANGE ENHANCEMENT  GAAS  HETEROSTRUCTURES  GAS  LIMIT  HETEROJUNCTIONS  POLARONS  MODES  LEVEL