机构

• 高能物理研究所 [2]
• 金属研究所 [1]
• 上海应用物理研究所 [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2023 [1]
• 2020 [1]
• 2017 [2]
• 2010 [1]

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Atomic structural visualization on gamma-Ho2Si2O7 using iDPC-STEM technique and its correlation with thermal expansion as advanced environmental barrier coating 期刊论文  OAI收割 MATERIALS TODAY PHYSICS, 2023, 卷号: 30, 页码: 6 作者:  Lv, Xirui;  Luo, Yixiu;  Cui, Jingping;  Zhang, Jie;  Zhang, Lei   |  收藏  |  浏览/下载：9/0  |  提交时间：2023/05/09 RE disilicate  Thermal expansion  Integrated differential phase contrast  Imaging technique  Environmental barrier coatings   Evidence of rescattering effect in Pb-Pb collisions at the LHC through production of K*(892)(0) and phi(1020) mesons 期刊论文  OAI收割 PHYSICS LETTERS B, 2020, 卷号: 802, 页码: - 作者:  Acharya, S;  Acosta, FT;  Adam, J;  Adamova, D;  Adler, A   |  收藏  |  浏览/下载：37/0  |  提交时间：2021/09/06 QUARK-GLUON PLASMA  RESONANCE PRODUCTION  ROOT-S(NN)=200 GEV  FREEZE-OUT  ENERGY  PERSPECTIVE  PHYSICS  MATTER  AU+AU  PIONS   BAW sensor readout circuit based on Pierce oscillator architecture 期刊论文  OAI收割 Proceedings of SPIE - The International Society for Optical Engineering, 2017, 卷号: 10438, 页码: 104380B 作者:  Wang YH(王宇航);  Gao, Yang;  Yin, Xi-Yang;  Han, Bin;  Wang, Yu-Hang   |  收藏  |  浏览/下载：103/0  |  提交时间：2019/08/29 MEMS (Micro-Electro-Mechanical System)  BAW (bulk acoustic wave)  resonator  sensor  read-out circuit  oscillator  phase noise  frequency stability   BAW sensor readout circuit based on Pierce oscillator architecture 期刊论文  OAI收割 Proceedings of SPIE - The International Society for Optical Engineering, 2017, 卷号: 10438, 页码: 104380B 作者:  Gao, Yang;  Yin, Xi-Yang;  Han, Bin;  Wang, Yu-Hang;  Wang YH(王宇航)   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/08/27 MEMS (Micro-Electro-Mechanical System)  BAW (bulk acoustic wave)  resonator  sensor  read-out circuit  oscillator  phase noise  frequency stability   An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文  OAI收割 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS 收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD