中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体器件 [4]
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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文  OAI收割
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
作者:  
Jin P;  Li CM;  Xu B;  Ye XL
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Studies of 6H-SiC devices 会议论文  OAI收割
korea-china joint symposium on smiconductor physics and device applications, seoul, south korea, dec 05-09, 2001
Wang SR; Liu ZL
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Ti Schottky barrier diodes on n-type 6H-SiC 会议论文  OAI收割
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
作者:  
Yu F
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Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文  OAI收割
1998 nuclear science symposium (nss), toronto, canada, nov 08-14, 1998
Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ
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