机构

• 半导体研究所 [87]

采集方式

• OAI收割 [87]

内容类型

• 会议论文 [87]

发表日期

• 2011 [2]
• 2010 [1]
• 2008 [7]
• 2007 [2]
• 2006 [16]
• 2005 [1]
• 更多

学科主题

• 半导体材料 [87]

筛选

浏览/检索结果: 共87条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Terahertz quantum cascade lasers operating above liquid nitrogen temperature 会议论文  OAI收割 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010 作者:  Li L;  Chen JY 收藏  |  浏览/下载：28/0  |  提交时间：2011/07/26 Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文  OAI收割 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010 Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：12/0  |  提交时间：2011/07/26 Donor defect in P-diffused bulk ZnO single crystal 会议论文  OAI收割 29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009 Zhao YW (Zhao Youwen); Zhang R (Zhang Rui); Zhang F (Zhang Fan); Dong ZY (Dong Zhiyuan); Yang J (Yang Jun) 收藏  |  浏览/下载：461/158  |  提交时间：2010/10/11 Zinc Oxide  doping  defect   High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yan, JC; Wang, JX; Liu, Z; Liu, NX; Li, JM 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 DIODES   Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Xu B;  Jin P 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09 INAS   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09 Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z 收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09 QUANTUM-WELLS  SPIN