机构

• 半导体研究所 [5]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2010 [5]

学科主题

• 半导体物理 [5]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理    发表日期：2010     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Donor-donor binding in In2O3: Engineering shallow donor levels 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 8, 页码: art. no. 083704, Art. No. 083704 作者:  Tang LM (Tang Li-Ming);  Wang LL (Wang Ling-Ling);  Wang D (Wang Dan);  Liu JZ (Liu Jian-Zhe);  Chen KQ (Chen Ke-Qiu)   |  收藏  |  浏览/下载：67/0  |  提交时间：2010/05/24 AUGMENTED-WAVE METHOD  Augmented-wave Method  Electronic-structure  Semiconductors  Films  Znse  Znte  ELECTRONIC-STRUCTURE  SEMICONDUCTORS  FILMS  ZNSE  ZNTE   Optical properties of UO2 and PuO2 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 400, 400, 期号: 2, 页码: 151-156, 151-156 作者:  Shi HL (Shi Hongliang);  Chu MF (Chu Mingfu);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn   |  收藏  |  浏览/下载：73/0  |  提交时间：2010/06/18 ELECTRONIC-STRUCTURE  Electronic-structure  Uranium-dioxide  Point-defects  Photoemission  Energy  Approximation  Energetics  Plutonium  Crystal  Spectra  URANIUM-DIOXIDE  POINT-DEFECTS  PHOTOEMISSION  ENERGY  APPROXIMATION  ENERGETICS  PLUTONIUM  CRYSTAL  SPECTRA   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：105/1  |  提交时间：2010/10/11 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  GAN NANOWIRES  NATIVE DEFECTS  COMPLEXES  EPITAXY  GROWTH  ARRAYS   Origins of magnetism in transition metal doped Cul 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 043713, Art. No. 043713 作者:  Wang J (Wang Jing)   |  收藏  |  浏览/下载：86/0  |  提交时间：2010/10/11 AUGMENTED-WAVE METHOD  Augmented-wave Method  Optical-properties  Cuprous Halides  Copper Halides  Band-structure  Cubr  Photoemission  Pressure  Density  States  OPTICAL-PROPERTIES  CUPROUS HALIDES  COPPER HALIDES  BAND-STRUCTURE  CUBR  PHOTOEMISSION  PRESSURE  DENSITY  STATES   Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 19, 页码: art. no. 193204, Art. No. 193204 作者:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai)   |  收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27 IMPURITIES  Impurities  Gaas1-xnx  Nitrogen  Gainnas  States  Traps  GAAS1-XNX  NITROGEN  GAINNAS  STATES  TRAPS