中国科学院机构知识库网格系统: 检索

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	Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏 \| 浏览/下载：61/12 \| 提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY FE-DOPED INP POINT-DEFECTS COMPENSATION TEMPERATURE DONORS TRAPS
	Study of infrared luminescence from Er-implanted GaN films 会议论文 OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 Chen WD; Song SF; Zhu JJ; Wang XL; Chen CY; Hsu CC 收藏 \| 浏览/下载：24/0 \| 提交时间：2010/11/15 doping metalorganic chemical vapor deposition molecular beam epitaxy gallium compounds semiconducting gallium compounds ERBIUM
	Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文 OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏 \| 浏览/下载：15/0 \| 提交时间：2010/11/15 acceptor binding energy hole effective-mass Hamiltonian wurtzite GaN
	Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文 OAI收割 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W 收藏 \| 浏览/下载：12/0 \| 提交时间：2010/11/15 GaNAs DC active N-2 plasma molecular beam epitaxy nitrogen content Fourier transform infrared spectroscopy of intensity BAND-GAP ENERGY GAAS1-XNX NITROGEN