中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
金属研究所 [335]
采集方式
OAI收割 [335]
内容类型
期刊论文 [335]
发表日期
2022 [20]
2021 [13]
2020 [24]
2019 [10]
2018 [10]
2015 [8]
更多
学科主题
Materials ... [8]
Chemistry,... [5]
Metallurgy... [4]
Nanoscienc... [3]
Physics, A... [3]
Chemistry,... [2]
更多
筛选
浏览/检索结果:
共335条,第1-10条
帮助
限定条件
内容类型:期刊论文
专题:金属研究所
第一署名单位
第一作者单位
通讯作者单位
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Composition-dependent shuffle-shear coupling and shuffle-regulated strain glass transition in compositionally modulated Ti-Nb alloys
期刊论文
OAI收割
ACTA MATERIALIA, 2023, 卷号: 246, 页码: 16
作者:
Su, Yunting
;
Liang, Chuanxin
;
Sun, Xun
;
Zhang, Hualei
;
Liang, Qianglong
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/05/09
Martensitic transformations
Atomic shuffle
Spinodal decomposition
Ti-Nb shape memory alloys
Computer simulation
Entangled polarizations in ferroelectrics: A focused review of polar topologies
期刊论文
OAI收割
ACTA MATERIALIA, 2023, 卷号: 243, 页码: 37
作者:
Wang, Y. J.
;
Tang, Y. L.
;
Zhu, Y. L.
;
Ma, X. L.
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/05/09
Polar topologies
Ferroelectric films
Aberration-corrected transmission electron
microscopy
Piezoresponse force microscopy
Phase-field simulations
Room-Temperature Ferroelectricity of Paraelectric Oxides Tailored by Nano-Engineering
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2023, 页码: 8
作者:
Liu, Jiaqi
;
Cao, Yi
;
Tang, Yun-Long
;
Zhu, Yin-Lian
;
Wang, Yujia
  |  
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2023/05/09
pulsed laser deposition
SrTiO3
CeO2 epitaxial structure
room-temperature ferroelectricity
nano-engineering
strain engineering
A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory
期刊论文
OAI收割
ADVANCED MATERIALS, 2022, 页码: 10
作者:
Li, Wanying
;
Guo, Yimeng
;
Luo, Zhaoping
;
Wu, Shuhao
;
Han, Bo
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/05/09
2D ferroelectrics
array
memristive device
multi-bit storage
van der waals heterostructures
Machine-learning model for prediction of martensitic transformation temperature in NiMnSn-based ferromagnetic shape memory alloys
期刊论文
OAI收割
COMPUTATIONAL MATERIALS SCIENCE, 2022, 卷号: 215, 页码: 7
作者:
Tian, Xiaohua
;
Shi, Dingding
;
Zhang, Kun
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/05/09
Ferromagnetic shape memory alloys
Martensitic transformation temperature
Machine learning
NiMnSn-based alloys
XGBRegressor
Shear-band blunting governs superior mechanical properties of shape memory metallic glass composites
期刊论文
OAI收割
ACTA MATERIALIA, 2022, 卷号: 241, 页码: 12
作者:
Zhang, Long
;
Yan, Tingyi
;
Sopu, Daniel
;
Wu, Yi
;
Jiang, Binbin
  |  
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2023/05/09
Shear-band blunting
Metallic glass composites
Strain-hardening
Tensile ductility
Martensitic transformations
Shear-band blunting governs superior mechanical properties of shape memory metallic glass composites
期刊论文
OAI收割
ACTA MATERIALIA, 2022, 卷号: 241, 页码: 12
作者:
Zhang, Long
;
Yan, Tingyi
;
Sopu, Daniel
;
Wu, Yi
;
Jiang, Binbin
  |  
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2023/05/09
Shear-band blunting
Metallic glass composites
Strain-hardening
Tensile ductility
Martensitic transformations
Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect
期刊论文
OAI收割
ADVANCED ELECTRONIC MATERIALS, 2022, 页码: 8
作者:
Song, Yuhang
;
Dai, Zhiming
;
Liu, Long
;
Wu, Jinxiang
;
Li, Tingting
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2023/05/09
field-free switching
perpendicular magnetic anisotropy
spin Hall effect
spin-orbit torque
spin-polarized electrons
Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect
期刊论文
OAI收割
ADVANCED ELECTRONIC MATERIALS, 2022, 页码: 8
作者:
Song, Yuhang
;
Dai, Zhiming
;
Liu, Long
;
Wu, Jinxiang
;
Li, Tingting
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2023/05/09
field-free switching
perpendicular magnetic anisotropy
spin Hall effect
spin-orbit torque
spin-polarized electrons
Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction
期刊论文
OAI收割
NANOSCALE ADVANCES, 2022, 页码: 8
作者:
Zang, Chao
;
Li, Bo
;
Sun, Yun
;
Feng, Shun
;
Wang, Xin-Zhe
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/05/09