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• 长春光学精密机械与... [14]

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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Optical and electrical properties of p-type ZnO thin film post-treated by plasma-enhanced chemical vapor deposition 会议论文  OAI收割 2014 International Conference on Mechatronics and Intelligent Materials, MIM 2014, May 18, 2014 - May 19, 2014, Lijiang, China Cao P.; Bai Y.; Qu Z. 收藏  |  浏览/下载：14/0  |  提交时间：2015/04/27 Structural properties of p-type ZnO thin film post-treated by NH3 plasma method 会议论文  OAI收割 4th International Conference on Advanced Engineering Materials and Technology, AEMT 2014, June 14, 2014 - June 15, 2014, Xiamen, China Cao P.; Bai Y. 收藏  |  浏览/下载：36/0  |  提交时间：2015/04/27 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   Effect of substrate orientation and PH3 thermal annealing treatment on catalyst-free InP nanowires 会议论文  OAI收割 2013 2nd International Conference on Materials Science and Technology, ICMST 2013, April 11, 2013 - April 12, 2013, Hong Kong, China Miao G. Q.; Zhang Z. W. 收藏  |  浏览/下载：10/0  |  提交时间：2014/05/15 ZnO films growth at different temperature on the substrate of Corning glass by MOCVD (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Zhao J.;  Gao X.;  Wang C.;  Tang W. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46  indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM). (2010) Trans Tech Publications.   Growth of ZnO films under different oxygen partial pressures by metal organic chemical vapour deposition (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Gao X.;  Zhao J.;  Tang W.;  Wang C. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 ZnO films were grown under different oxygen partial pressures by metal organic chemical vapor deposition on the substrates of Corning glass. We investigated the quality of the films by SIEMENS D8 X-ray diffractometer. The surface morphology of the films were observed by Digital Nanoscope IIIa AFM with normal silicon nitride tip in the contact mode. The hall effect measurements were carried out with indium ohmic contact. The transmission spectrum of the films were measured. The transmission ratio is larger than 80% in the region above the wavelength of 385nm  and sharply decreased under 10% below the wavelength of 375 nm. (2010) Trans Tech Publications.   ZnO thin film grown on glass by metal-organic chemical vapor deposition 会议论文  OAI收割 2008 作者:  Wang C. 收藏  |  浏览/下载：8/0  |  提交时间：2013/03/28 ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文  OAI收割 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1  2  3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50  indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.