机构

• 力学研究所 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [3]

内容类型

• 会议论文 [3]

发表日期

• 2013 [1]
• 2010 [1]
• 2005 [1]

学科主题

• 固体力学::制造工艺... [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Responses of thin film photovoltaic cell to irradiation under double laser beams of different wavelength 会议论文  OAI收割 Chinese Materials Congress (CMC 2012), Taiyuan, PEOPLES R CHINA, JUL 13-18, 2012 作者:  Yuan YC(袁雨辰);  Wu CW(吴臣武);  Chen GN(陈光南) 收藏  |  浏览/下载：33/0  |  提交时间：2013/12/12 Laser  Thin-film photovoltaic cell  Heat  Temperature elevation  Efficiency   Underwater acoustic absorbing materials based on construction of locally resonant units and interpenetrating network 会议论文  OAI收割 17th International Congress on Sound and Vibration 2010, ICSV 2010, Cairo, Egypt, July 18, 2010 - July 22, 2010 作者:  Wang YR(王育人);  Jiang H(姜恒);  Chen M(陈猛) 收藏  |  浏览/下载：15/0  |  提交时间：2017/06/20 Acoustic absorbing materials  Acoustic absorption  High mechanical strength  Metal-polymer composites  Resonant mode  Theoretical result  Wide frequency bands   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.