机构

• 半导体研究所 [34]

采集方式

• OAI收割 [34]

内容类型

• 期刊论文 [30]
• 会议论文 [4]

发表日期

• 2017 [1]
• 2016 [1]
• 2015 [1]
• 2014 [1]
• 2012 [2]
• 2011 [7]
• 更多

学科主题

• 半导体材料 [34]

筛选

浏览/检索结果: 共34条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3 期刊论文  OAI收割 Applied Surface Science, 2017, 卷号: 413, 页码: 191–196 作者:  Chao Yuan;  Min Guan 收藏  |  浏览/下载：41/0  |  提交时间：2018/06/01 Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures 期刊论文  OAI收割 applied physics express, 2016, 卷号: 9, 期号: 5, 页码: 052104 Fei Ren; Feng-Jiao Wang; Shu-Man Liu; Zhen-Dong Ning; Ning Zhuo; Xiao-Ling Ye; Jun-Qi Liu; Li-Jun Wang; Feng-Qi Liu; Zhan-Guo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Overshoot effect and inflexion characteristics in transient electroluminescence of hybrid phosphorescent OLEDs 期刊论文  OAI收割 journal of physics d-applied physics, 2015, 卷号: 48, 期号: 5, 页码: 055103 Litao Niu; Min Guan; Xinbo Chu; Yiping Zeng; Yiyang Li; Yang Zhang 收藏  |  浏览/下载：18/0  |  提交时间：2016/03/29 Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence 期刊论文  OAI收割 chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 027304 Zhang, J; Yu, JL; Cheng, SY; Lai, YF; Chen, YH 收藏  |  浏览/下载：17/0  |  提交时间：2015/03/20 Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 100, 期号: 17, 页码: 171109 Dong, JJ; Zhang, XW; Yin, ZG; Wang, JX; Zhang, SG; Si, FT; Gao, HL; Liu, X 收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17 Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 1, 页码: 013112 Zhang, S.G; Zhang, X.W; Yin, Z.G; Wang, J.X; Si, F.T; Gao, H.L; Dong, J.J; Liu, X 收藏  |  浏览/下载：11/0  |  提交时间：2013/04/22 Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708 作者:  Zhang XW 收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05 UV ELECTROLUMINESCENCE  THIN-FILMS  ZNO   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 99, 期号: 18, 页码: 181116 Zhang SG (Zhang S. G.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.); Wang JX (Wang J. X.); Dong JJ (Dong J. J.); Gao HL (Gao H. L.); Si FT (Si F. T.); Sun SS (Sun S. S.); Tao Y (Tao Y.) 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/21 Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 24, 页码: 241111, 241111 作者:  Zhang, L;  Wei, XC;  Liu, NX;  Lu, HX;  Zeng, JP   |  收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06 ALGAN/GAN HETEROSTRUCTURES  TRANSPORT-PROPERTIES  Algan/gan Heterostructures  Transport-properties