中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共5条，第1-5条

帮助

条数/页：排序方式：
	Study on the reverse characteristics of Ti/6H-SiC Schottky contacts 期刊论文 OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 1, 页码: 211-216 Shang YC; Liu ZL; Wang SR 收藏 \| 浏览/下载：55/0 \| 提交时间：2010/08/12 SiC Schottky contacts reverse characteristics tunneling current ELECTRICAL CHARACTERISTICS INHOMOGENEITIES DIODES
	Influence of transverse interdot coupling on transport properties of an Aharonov-Bohm structure composed by two dots and two reservoirs 期刊论文 OAI收割 physical review b, 2002, 卷号: 66, 期号: 20, 页码: art.no.205306 Jiang ZT; You JQ; Bian SB; Zheng HZ 收藏 \| 浏览/下载：42/0 \| 提交时间：2010/08/12 DOUBLE-QUANTUM-DOT ARTIFICIAL MOLECULE RATE-EQUATIONS RING INTERFERENCE SPECTROSCOPY OSCILLATIONS CONDUCTANCE INTRADOT
	Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy 期刊论文 OAI收割 acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 310-314 Lu LW; Wang ZG; Yang CL; Wang J; Ma ZH; Sou IK; Ge WK 收藏 \| 浏览/下载：93/10 \| 提交时间：2010/08/12 II-VI semiconductor self-organized quantum dots optical and electrical properties TEMPERATURE-DEPENDENCE WELL STRUCTURES LASER-DIODES PHOTOLUMINESCENCE SPECTROSCOPY EPILAYERS SURFACE STATES
	Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well 期刊论文 OAI收割 physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.113305 作者: 收藏 \| 浏览/下载：83/1 \| 提交时间：2010/08/12 RESONANT-TUNNELING DIODES SPACER LAYERS SPECTROSCOPY DOTS HETEROSTRUCTURES
	Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文 OAI收割 ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 Ho WY; Surya C; Tong KY; Lu LW; Ge WK 收藏 \| 浏览/下载：38/0 \| 提交时间：2010/08/12 current stressing DLTS flicker noise heterojunctions III-V nitride LOW-FREQUENCY FLUCTUATIONS RESONANT-TUNNELING DIODES FLICKER NOISE GALLIUM NITRIDE 1/F NOISE DEVICES TRANSISTORS QUALITY