中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 新疆理化技术研究所 [10]
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Single event transient effect of frontside and backside illumination image sensors under proton irradiation 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:  
Fu, J (Fu Jing) [1] , [2] , [3];  Cai, YL (Cai Yu-Long) [4];  Li, YD (Li Yu-Dong) [1] , [2];  Feng, J (Feng Jie) [1] , [2];  Wen, L (Wen Lin) [1] , [2]
  |  收藏  |  浏览/下载:26/0  |  提交时间:2022/06/06
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:  
Cai, YL (Cai, Yulong)[ 1,2 ];  Wen, L (Wen, Lin)[ 3 ];  Li, YD (Li, Yudong)[ 3 ];  Guo, Q (Guo, Qi)[ 3 ];  Zhou, D (Zhou, Dong)[ 3 ]
  |  收藏  |  浏览/下载:15/0  |  提交时间:2020/09/09
Heavy ion-induced single event effects in active pixel sensor array 期刊论文  OAI收割
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
作者:  
Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ]
  |  收藏  |  浏览/下载:126/0  |  提交时间:2019/01/03
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文  OAI收割
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:  
Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
  |  收藏  |  浏览/下载:36/0  |  提交时间:2018/11/20
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997-1004
作者:  
Chen, ZJ (Chen, Zhuojun);  Ding, D (Ding, Ding);  Dong, YM (Dong, Yemin);  Shan, Y (Shan, Yi);  Zhou, SX (Zhou, Shuxing)
  |  收藏  |  浏览/下载:35/0  |  提交时间:2018/05/07
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:  
Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei)
收藏  |  浏览/下载:21/0  |  提交时间:2015/07/11
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:  
Zhang, JX (Zhang Jin-Xin)
  |  收藏  |  浏览/下载:12/0  |  提交时间:2018/02/01
3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors 期刊论文  OAI收割
Journal of Semiconductors, 2014, 卷号: 35, 期号: 4
作者:  
Jinxin, Zhang;  Hongxia, Guo;  Lin, Wen;  Qi, Guo;  Jiangwei, Cui
收藏  |  浏览/下载:16/0  |  提交时间:2014/11/11
累积剂量影响静态随机存储器单粒子效应敏感性研究 期刊论文  OAI收割
物理学报, 2014, 卷号: 63, 期号: 1, 页码: 387-392
作者:  
肖尧;  郭红霞;  张凤祁;  赵雯;  王燕萍
收藏  |  浏览/下载:13/0  |  提交时间:2014/11/11
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:  
Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei
收藏  |  浏览/下载:29/0  |  提交时间:2013/11/07