中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [10]
采集方式
OAI收割 [10]
内容类型
期刊论文 [10]
发表日期
2022 [1]
2020 [1]
2019 [1]
2018 [2]
2015 [1]
2014 [3]
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学科主题
Physics [1]
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专题:新疆理化技术研究所
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Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
Heavy ion-induced single event effects in active pixel sensor array
期刊论文
OAI收割
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
作者:
Cai, YL (Cai, Yu-Long)[ 1,2,3 ]
;
Guo, Q (Guo, Qi)[ 1,2 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:126/0
  |  
提交时间:2019/01/03
CMOS active pixel sensor (APS)
SEE
Heavy ion
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
OAI收割
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
  |  
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 4, 页码: 997-1004
作者:
Chen, ZJ (Chen, Zhuojun)
;
Ding, D (Ding, Ding)
;
Dong, YM (Dong, Yemin)
;
Shan, Y (Shan, Yi)
;
Zhou, SX (Zhou, Shuxing)
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2018/05/07
Phase-locked Loop (Pll)
Phase Noise
Reference Spur
Total Ionizing Dose (Tid)
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Wen, L (Wen Lin)
;
Cui, JW (Cui Jiang-Wei)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2015/07/11
SiGe heterojunction bipolar transistor
single event effect
hardening design
dummy collector
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:
Zhang, JX (Zhang Jin-Xin)
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/02/01
Sige Heterojunction Bipolar Transistor
Different Bias
Single Event Effect
3d Numerical Simulation
3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors
期刊论文
OAI收割
Journal of Semiconductors, 2014, 卷号: 35, 期号: 4
作者:
Jinxin, Zhang
;
Hongxia, Guo
;
Lin, Wen
;
Qi, Guo
;
Jiangwei, Cui
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2014/11/11
累积剂量影响静态随机存储器单粒子效应敏感性研究
期刊论文
OAI收割
物理学报, 2014, 卷号: 63, 期号: 1, 页码: 387-392
作者:
肖尧
;
郭红霞
;
张凤祁
;
赵雯
;
王燕萍
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/11/11
累积剂量
单粒子效应
静态随机存储器
反印记效应
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:
Zhang Jin-Xin
;
Guo Hong-Xia
;
Guo Qi
;
Wen Lin
;
Cui Jiang-Wei
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/11/07
SiGe heterojunction bipolar transistor
single event effect
charge collection
three-dimensional numerical simulation