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Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体材料 [4]
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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  
Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
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Effect of growth conditions on the GaN thin film by sputtering deposition 期刊论文  OAI收割
journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 268-271
Zhang CG; Bian LF; Chen WD; Hsu CC
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P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering 期刊论文  OAI收割
applied physics letters, 2006, 卷号: 88, 期号: 15, 页码: art.no.152102
作者:  
Yin ZG
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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文  OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
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