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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [16]
采集方式
OAI收割 [16]
内容类型
期刊论文 [16]
发表日期
2011 [2]
2010 [1]
2008 [4]
2007 [1]
2006 [2]
2003 [2]
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学科主题
半导体物理 [16]
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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 42, 页码: 425103, 425103
作者:
Lang, XL
;
Xia, JB
;
Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn
;
xiajb@semi.ac.cn
  |  
收藏
  |  
浏览/下载:70/0
  |  
提交时间:2012/01/06
GASB SUPER-LATTICE
SEMICONDUCTOR HETEROSTRUCTURES
DEFORMATION POTENTIALS
II SUPERLATTICES
BAND PARAMETERS
DETECTORS
APPROXIMATION
TRANSITIONS
Gasb Super-lattice
Semiconductor Heterostructures
Deformation Potentials
Ii Superlattices
Band Parameters
Detectors
Approximation
Transitions
Thermoelectric effect in a serial two-quantum-dot
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 10, 页码: 1352-1356, 1352-1356
作者:
Chi F
;
Zheng J
;
Lu XD
;
Zhang KC
;
Chi, F, Bohai Univ, Coll Engn, Jinzhou 121013, Peoples R China. chifeng@semi.ac.cn
  |  
收藏
  |  
浏览/下载:53/6
  |  
提交时间:2011/07/05
Thermoelectric effect
Quantum dot
Figure of merit
QUANTUM-DOT
ELECTRON-TRANSPORT
OSCILLATIONS
THERMOPOWER
PERFORMANCE
DEVICES
MERIT
Thermoelectric Effect
Quantum Dot
Figure Of Merit
Quantum-dot
Electron-transport
Oscillations
Thermopower
Performance
Devices
Merit
Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations
期刊论文
OAI收割
european physical journal b, EUROPEAN PHYSICAL JOURNAL B, 2010, 2010, 卷号: 77, 77, 期号: 3, 页码: 345-349, 345-349
作者:
Zhang YJ (Zhang Y. J.)
;
Shi HL (Shi H. -L.)
;
Wang SX (Wang S. X.)
;
Zhang P (Zhang P.)
;
Li RW (Li R. W.)
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/11/27
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1120-1123
Dou, XM
;
Sun, BQ
;
Wang, BR
;
Ma, SS
;
Zhou, R
;
Huang, SS
;
Ni, HQ
;
Niu, ZC
收藏
  |  
浏览/下载:50/2
  |  
提交时间:2010/03/08
EXCHANGE INTERACTION
GAAS
PRESSURE
DEPENDENCE
AMPLIFIERS
ELECTRON
EMISSION
EXCITONS
PHOTONS
SPECTRA
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307
Xu, Q
;
Li, JB
;
Li, SS
;
Xia, JB
收藏
  |  
浏览/下载:73/1
  |  
提交时间:2010/03/08
EXCHANGE INTERACTION
SEMICONDUCTORS
GAAS
ENERGIES
DOTS
MN
First-principles study of transition metal impurities in Si
期刊论文
OAI收割
physical review b, 2008, 卷号: 77, 期号: 15, 页码: art. no. 155201
Zhang ZZ
;
Partoens B
;
Chang K
;
Peeters FM
收藏
  |  
浏览/下载:61/7
  |  
提交时间:2010/03/08
SILICON
Correlations between electronic energy bands spin splitting and magnetic profile symmetry of magnetic superlattice
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 9, 页码: 2959-2964
Xu, HZ
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
energy dispersion relation
magnetic superlattice
spin splitting
electronic band
inversion anti-symmetry
Electronic structure of a hydrogenic acceptor impurity in semiconductor nano-structures
期刊论文
OAI收割
nanoscale research letters, 2007, 卷号: 2, 期号: 11, 页码: 554-560
Li, SS
;
Xia, JB
收藏
  |  
浏览/下载:45/2
  |  
提交时间:2010/03/08
QUANTUM-DOT
Linear-Polarization Optical Property of CdSe Quantum Rods
期刊论文
OAI收割
半导体学报, 2006, 卷号: 27, 期号: 12, 页码: 2094-2100
Zhang Xiuwen
;
Xia Jianbai
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/23
Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 8, 页码: art.no.083714
Li SS (Li Shu-Shen)
;
Xia JB (Xia Jian-Bai)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/04/11
SEMICONDUCTORS
STATES