中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [5]
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文  OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:13/0  |  提交时间:2012/02/06
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文  OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:32/2  |  提交时间:2011/07/05
Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文  OAI收割
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文  OAI收割
applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111
Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文  OAI收割
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29