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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [5]
采集方式
OAI收割 [5]
内容类型
期刊论文 [5]
发表日期
2017 [2]
2015 [1]
2011 [1]
2010 [1]
学科主题
半导体物理 [5]
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Aharonov-Bohm effect in monolayer phosphorene nanorings
期刊论文
OAI收割
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 12, 页码: 125418
作者:
Rui Zhang
;
Zhenhua Wu
;
X. J. Li
;
Kai Chang
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/06/01
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
期刊论文
OAI收割
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
作者:
Y. Jiang
;
S. Thapa
;
G. D. Sanders
;
C. J. Stanton
;
Q. Zhang
  |  
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2018/06/01
Landau levels and magneto-transport property of monolayer phosphorene
期刊论文
OAI收割
scientific reports, 2015, 卷号: 5, 页码: 12295
X. Y. Zhou
;
R. Zhang
;
J. P. Sun
;
Y. L. Zou
;
D. Zhang
;
W. K. Lou
;
F. Cheng
;
G. H. Zhou
;
F. Zhai
;
Kai Chang
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2016/04/08
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Tuning of the two electron states in quantum rings through the spin-orbit interaction
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 4, 页码: art. no. 045312, Art. No. 045312
作者:
Liu Y (Liu Y.)
;
Cheng F (Cheng F.)
;
Li XJ (Li X. J.)
;
Peeters FM (Peeters F. M.)
;
Chang K (Chang Kai)
  |  
收藏
  |  
浏览/下载:70/4
  |  
提交时间:2010/08/17
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