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CAS IR Grid
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长春光学精密机械与物... [6]
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OAI收割 [6]
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期刊论文 [4]
会议论文 [2]
发表日期
2022 [1]
2018 [2]
2013 [1]
2006 [2]
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存缴方式:oaiharvest
专题:长春光学精密机械与物理研究所
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Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface
期刊论文
OAI收割
Chinese Physics B, 2022, 卷号: 31, 期号: 6, 页码: 5
作者:
W. M. Jiang
;
Q. Zhao
;
J. Z. Ling
;
T. N. Shao
;
Z. T. Zhang
  |  
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2023/06/14
Enhancement of NaErF4 Nanostructure Upconversion Luminescence with K+ Doping
期刊论文
OAI收割
Faguang Xuebao/Chinese Journal of Luminescence, 2018, 卷号: 39, 期号: 7, 页码: 903-908
作者:
Zhang, Mei-Ling
;
Zhou, Jin
;
Zhang, Li
;
Li, Qi-Qing
;
Tu, Lang-Ping
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/09/17
Fluorine compounds
Efficiency
Erbium compounds
Luminescence
Metal ions
Nanoparticles
Potassium compounds
Rare earths
Shells (structures)
Sodium compounds
Studies of Solid Phase Immunoassay Based on Near Infrared Upconversion Nanoprobe
期刊论文
OAI收割
Faguang Xuebao/Chinese Journal of Luminescence, 2018, 卷号: 39, 期号: 8, 页码: 1059-1065
作者:
Zhou, Jin
;
Zhang, Mei-Ling
;
Zhang, Li
;
Li, Cui-Xia
;
Zhao, Hui-Ying
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/09/17
Bioassay
Antigens
Biosensors
Chlorine compounds
Diagnosis
Immunology
Infrared devices
Luminescence
Silicon wafers
Synthesis (chemical)
Laser diode and pumped Cr:Yag passively Q-switched yellow-green laser at 543 nm
期刊论文
OAI收割
Optics and Spectroscopy, 2013, 卷号: 114, 期号: 3
作者:
Zhao Y.
;
Li B.
;
Zhao Y.
;
Zhao Y.
;
Li B.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2014/05/14
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE)
会议论文
OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.
;
Ling Z. H.
;
Jing H.
;
Fu G. Z.
;
Zhao Y. H.
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2013/03/25
The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior
crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity
i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature
the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature
the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization - art. no. 60300
会议论文
OAI收割
2006
Huang J. Y.
;
Ling Z. H. H.
;
Jing H.
;
Fu G. Z.
;
Zhao Y. H.
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2013/03/28