中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2017 [3]
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  • 光电子学 [3]
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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文  OAI收割
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  
J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
  |  收藏  |  浏览/下载:21/0  |  提交时间:2018/11/30
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  
X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  
P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载:24/0  |  提交时间:2018/07/11