机构

• 长春光学精密机械与物... [8]

采集方式

• OAI收割 [8]

内容类型

• 会议论文 [8]

发表日期

• 2013 [2]
• 2012 [1]
• 2008 [1]
• 1998 [3]
• 1996 [1]

学科主题

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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   InGaAs nanoflowers grown by MOCVD (EI CONFERENCE) 会议论文  OAI收割 2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China 作者:  Zhang T. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 InGaAs nanoflowers have been prepared on InP substrates by MOCVD  using TMIn  TMGa and AsH3 as reactive precursors at 420 C. Through observation by scanning electron microscopy  we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared  when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As. (2012) Trans Tech Publications  Switzerland.   Optimization procedure for design of heliostat field layout of a 1MWe solar tower thermal power plant - art. no. 684119 会议论文  OAI收割 2008 Wei X. D.; Lu Z. W.; Lin Z.; Zhang H. X.; Ni Z. G. 收藏  |  浏览/下载：3/0  |  提交时间：2013/03/28 Microcavity effect and InGaAs/InGaAsP MQW microdisk laser 会议论文  OAI收割 1998 作者:  Liu Y.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：8/0  |  提交时间：2013/03/28 Linewidth in microdisk laser 会议论文  OAI收割 1998 作者:  Liu Y.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：6/0  |  提交时间：2013/03/28 Optical modulation in ZnSe-ZnS Multiple Quantum Wells 会议论文  OAI收割 1998 Liu D. L.; Li G. Y.; Fan J. Q.; Lin J. L.; Fan X. W. 收藏  |  浏览/下载：5/0  |  提交时间：2013/03/28 ZnTe/CdZnTe MQWs optical bistable device on transmission at room temperature 会议论文  OAI收割 1996 作者:  Li M. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/28