机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2011 [6]

学科主题

• 光电子学 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2011     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Simulation of the light extraction efficiency of nanostructure light-emitting diodes 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 77804 Zhu JH; Wang LJ; Zhang SM; Wang H; Zhao DG; Zhu JJ; Liu ZS; Jiang DS; Yang H 收藏  |   The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 127306 Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui) 收藏  |   The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117 作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H 收藏  |   A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 53701 Zhao DG; Zhang S; Jiang DS; Zhu JJ; Liu ZS; Wang H; Zhang SM; Zhang BS; Yang H 收藏  |   Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750 作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL 收藏  |   Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84339 作者:  Wang H;  Yang H;  Yang H;  Zhu JJ;  Zhao DG 收藏  |